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High detectivity InGaAs/InGaP quantum-dot infrared photodetectors grown by low pressure metalorganic chemical vapor deposition

Appl. Phys. Lett. 84, 2166 (2004); doi:10.1063/1.1688982

Issue Date: 22 March 2004

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J. Jiang, S. Tsao, T. O'Sullivan, W. Zhang, H. Lim, T. Sills, K. Mi, and M. Razeghi
Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208

G. J. Brown
Air Force Research Laboratory, Materials & Manufacturing Directorate, AFRL/MLPS, Wright-Patterson AFB, Ohio 45433-7707

M. Z. Tidrow
Missile Defense Agency, 7100 Defense Pentagon, Washington, DC 20301
We report a high detectivity middle-wavelength infrared quantum dot infrared photodetector (QDIP). The InGaAs quantum dots were grown by self-assembly on an InGaP matrix via low pressure metalorganic chemical vapor deposition. Photoresponse was observed at temperatures above 200 K with a peak wavelength of 4.7 µm and cutoff wavelength of 5.2 µm. The background limited performance temperature was 140 K, and this was attributed to the super low dark current observed in this QDIP. A detectivity of 3.6×1010  cm Hz1/2/W, which is comparable to the state-of-the-art quantum well infrared photodetectors in a similar wavelength range, was obtained for this InGaAs/InGaP QDIP at both T = 77  K and T = 95  K at biases of –1.6 and –1.4 V, respectively. ©2004 American Institute of Physics.
History: Received 29 October 2003; accepted 2 February 2004
Permalink: http://link.aip.org/link/?APPLAB/84/2166/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.60.Gz
    Photodetectors including infrared and CCD detectors
  • 81.07.Ta
    Quantum dots: fabrication and characterization
  • 85.35.Be
    Quantum well devices including quantum dots, quantum wires, etc
  • 81.15.Gh
    Chemical vapor deposition including plasma-enhanced CVD, MOCVD, etc
  • 73.50.Pz
    Photoconduction and photovoltaic effects in thin films
  • 73.61.Ey
    Electrical properties of III–V semiconductors (thin films)
  • YEAR: 2004

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