High detectivity InGaAs/InGaP quantum-dot infrared photodetectors grown by low pressure metalorganic chemical vapor deposition
Appl. Phys. Lett. 84, 2166 (2004); doi:10.1063/1.1688982
Issue Date: 22 March 2004
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We report a high detectivity middle-wavelength infrared quantum dot infrared photodetector (QDIP). The InGaAs quantum dots were grown by self-assembly on an InGaP matrix via low pressure metalorganic chemical vapor deposition. Photoresponse was observed at temperatures above 200 K with a peak wavelength of 4.7 µm and cutoff wavelength of 5.2 µm. The background limited performance temperature was 140 K, and this was attributed to the super low dark current observed in this QDIP. A detectivity of 3.6×1010 cm Hz1/2/W, which is comparable to the state-of-the-art quantum well infrared photodetectors in a similar wavelength range, was obtained for this InGaAs/InGaP QDIP at both T = 77 K and T = 95 K at biases of 1.6 and 1.4 V, respectively. ©2004 American Institute of Physics.
| History: | Received 29 October 2003; accepted 2 February 2004 |
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http://link.aip.org/link/?APPLAB/84/2166/1 |
KEYWORDS and PACS
indium compounds,
gallium compounds,
gallium arsenide,
III-V semiconductors,
semiconductor quantum dots,
semiconductor growth,
MOCVD,
photodetectors,
infrared detectors,
self-assembly,
photoconductivity,
dark conductivity
- 85.60.Gz
Photodetectors including infrared and CCD detectors - 81.07.Ta
Quantum dots: fabrication and characterization - 85.35.Be
Quantum well devices including quantum dots, quantum wires, etc - 81.15.Gh
Chemical vapor deposition including plasma-enhanced CVD, MOCVD, etc - 73.50.Pz
Photoconduction and photovoltaic effects in thin films - 73.61.Ey
Electrical properties of IIIV semiconductors (thin films) - YEAR: 2004
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
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