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Demonstration of a 256×256 middle-wavelength infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors

Appl. Phys. Lett. 84, 2232 (2004); doi:10.1063/1.1688000

Issue Date: 29 March 2004

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J. Jiang, K. Mi, S. Tsao, W. Zhang, H. Lim, T. O'Sullivan, T. Sills, and M. Razeghi
Center for Quantum Devices Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208

G. J. Brown
Air Force Research Laboratory, Materials & Manufacturing Directorate, AFRL/MLPS, Wright-Patterson AFB, Ohio 45433-7707

M. Z. Tidrow
Missile Defense Agency, 7100 Defense Pentagon, Washington, DC 20301
We report a demonstration of an infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors. The middle-wavelength infrared quantum-dot infrared photodetector (QDIP) structure was grown via low-pressure metal organic chemical vapor deposition. A detectivity of 3.6×1010  cm Hz1/2/W was achieved at T = 95  K and a bias of –1.4 V. The background limited temperature of our QDIP was 140 K with a 45° field of view. A 256×256 detector array was fabricated with dry etching, and hybridized to a Litton readout chip by indium bumps. Thermal imaging was achieved at temperatures up to 120 K. At T = 77  K, the noise equivalent temperature difference was measured as 0.509 K with a 300 K background and f/2.3 optics. ©2004 American Institute of Physics.
History: Received 17 November 2003; accepted 21 January 2004
Permalink: http://link.aip.org/link/?APPLAB/84/2232/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.60.Gz
    Photodetectors including infrared and CCD detectors
  • 81.07.Ta
    Quantum dots: fabrication and characterization
  • 81.05.Ea
    III–V semiconductors: fabrication, treatment, testing and analysis
  • 68.65.Hb
    Quantum dots (structure and nonelectronic properties)
  • 81.65.Cf
    Surface cleaning, etching, patterning
  • YEAR: 2004

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (14)
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