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Direct and highly sensitive measurement of defect-related absorption in amorphous silicon thin films by cavity ringdown spectroscopy

Appl. Phys. Lett. 84, 3079 (2004); doi:10.1063/1.1713047

Issue Date: 19 April 2004

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I. M. P. Aarts, B. Hoex, A. H. M. Smets, R. Engeln, W. M. M. Kessels, and M. C. M. van de Sanden
Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
Cavity ringdown spectroscopy has been applied to hydrogenated amorphous silicon (a-Si:H) showing that this fully optical method is suited for the detection of defect-related absorption in thin films with a minimal detectable absorption of 1×10–6 per laser pulse and without the need for a calibration procedure. Absolute absorption coefficient spectra for photon energies between 0.7 and 1.7 eV have been obtained for thin a-Si:H films (4–98 nm) revealing a different spectral dependence for defects located in the bulk and in the surface/interface region of a-Si:H. ©2004 American Institute of Physics.
History: Received 17 November 2003; accepted 25 February 2004
Permalink: http://link.aip.org/link/?APPLAB/84/3079/1
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KEYWORDS and PACS

Keywords
PACS
  • 78.66.Jg
    Optical properties of amorphous semiconductors; glasses (thin films)
  • 78.66.Db
    Optical properties of elemental semiconductors and insulators (thin films)
  • 78.20.Ci
    Optical constants including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity
  • YEAR: 2004

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ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (19)
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