Size dependence of the work function in InAs quantum dots on GaAs(001) as studied by Kelvin force probe microscopy
We have investigated a work function of single InAs quantum dots (QDs) on GaAs(001) correlating with the dot size by means of Kelvin force probe microscopy. The observed contact potential difference (...
We have investigated a work function of single InAs quantum dots (QDs) on GaAs(001) correlating with the dot size by means of Kelvin force probe microscopy. The observed contact potential difference (...
Exchange bias of antiferromagnets with random anisotropies and perfectly compensated interfaces
An alternative mechanism for exchange bias for ferromagnet/antiferromagnet bilayers with completely compensated interfaces is proposed and analyzed within the biquadratic coupling model. We show that ...
An alternative mechanism for exchange bias for ferromagnet/antiferromagnet bilayers with completely compensated interfaces is proposed and analyzed within the biquadratic coupling model. We show that ...
A hybrid Al0.10Ga0.90As/AlAs bilayer electron system with tunable g-factor
Appl. Phys. Lett. 84, 3837 (2004); doi:10.1063/1.1745111
Published 29 April 2004
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We have fabricated a device composed of two closely coupled two-dimensional electron systems, one of which resides within an AlAs quantum well at the X point of the Brillouin zone, while the other is contained at the 
point in the alloy Al0.10Ga0.90As, grown directly below the AlAs. The electronic properties of these two systems are strongly asymmetric: the respective cyclotron masses in the AlAs and the Al0.10Ga0.90As layers, measured in units of the free electron mass, are ~0.5 and 0.07, while the effective electron g-factors are approximately 7 and 0. With the help of front and back gates, we can confine mobile carriers to either or both of the two quantum wells, as confirmed by magnetotransport measurements. ©2004 American Institute of Physics.
point in the alloy Al0.10Ga0.90As, grown directly below the AlAs. The electronic properties of these two systems are strongly asymmetric: the respective cyclotron masses in the AlAs and the Al0.10Ga0.90As layers, measured in units of the free electron mass, are ~0.5 and 0.07, while the effective electron g-factors are approximately 7 and 0. With the help of front and back gates, we can confine mobile carriers to either or both of the two quantum wells, as confirmed by magnetotransport measurements. ©2004 American Institute of Physics.
| History: | Received 29 September 2003; accepted 19 March 2004; published 29 April 2004 |
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http://link.aip.org/link/?APPLAB/84/3837/1 |
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BibSonomy
KEYWORDS and PACS
aluminium compounds,
gallium arsenide,
III-V semiconductors,
semiconductor quantum wells,
semiconductor heterojunctions,
magnetoresistance,
Brillouin zones,
Fermi surface,
g-factor,
conduction bands
- 73.21.Fg
Quantum wells (electron states/collective excitations) - 68.65.Fg
Quantum wells (structure and nonelectronic properties) - 72.20.My
Galvanomagnetic and other magnetotransport effects (semiconductors/insulators) - 73.40.Kp
Electrical properties of III–V semiconductor-to-semiconductor contacts, p–n junctions, and heterojunctions - YEAR: 2004
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PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
AIP
REFERENCES (13)
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- More precisely, we attempted to align the first energy levels of the conduction bands within each QW.
- A. F. W. van de Stadt, P. M. Koenraad, J. A. A. J. Perenboom, and J. H. Wolter,
Surf. Sci. 361–362, 521 (1996) , and references therein. - S. P. Shukla, M. Shayegan, S. R. Parihar, S. A. Lyon, N. R. Cooper, and A. A. Kiselev, Phys. Rev. B 61, 4469 (2000).
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Phys. Rev. 174, 823 (1968) . - For details on how to derive g* from coincidence angles, see S. J. Papadakis, E. P. De Poortere, and M. Shayegan, Phys. Rev. B 59, R12743 (1999). From our data, we expect the l = 2 coincidence to occur at
26°. However, little variation is expected between our = 0°, 14°, and 26° traces, since the corresponding cos values are all close to 1. - Recently, a bilayer AlAs QW structure with asymmetric m* and g* has also been demonstrated by K. Vakili, Y. P. Shkolnikov, E. Tutuc, E. P. De Poortere, and M. Shayegan [http://xxx.lanl.gov/abs/cond-mat/0309385 (2003)]. In this device, electrons in one AlAs QW populate the in-plane valley, while electrons in the other QW reside in an out-of-plane valley.
