A hybrid Al0.10Ga0.90As/AlAs bilayer electron system with tunable g-factor
Appl. Phys. Lett. 84, 3837 (2004); doi:10.1063/1.1745111
Published 29 April 2004
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We have fabricated a device composed of two closely coupled two-dimensional electron systems, one of which resides within an AlAs quantum well at the X point of the Brillouin zone, while the other is contained at the
point in the alloy Al0.10Ga0.90As, grown directly below the AlAs. The electronic properties of these two systems are strongly asymmetric: the respective cyclotron masses in the AlAs and the Al0.10Ga0.90As layers, measured in units of the free electron mass, are ~0.5 and 0.07, while the effective electron g-factors are approximately 7 and 0. With the help of front and back gates, we can confine mobile carriers to either or both of the two quantum wells, as confirmed by magnetotransport measurements. ©2004 American Institute of Physics.
point in the alloy Al0.10Ga0.90As, grown directly below the AlAs. The electronic properties of these two systems are strongly asymmetric: the respective cyclotron masses in the AlAs and the Al0.10Ga0.90As layers, measured in units of the free electron mass, are ~0.5 and 0.07, while the effective electron g-factors are approximately 7 and 0. With the help of front and back gates, we can confine mobile carriers to either or both of the two quantum wells, as confirmed by magnetotransport measurements. ©2004 American Institute of Physics.
| History: | Received 29 September 2003; accepted 19 March 2004; published 29 April 2004 |
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KEYWORDS and PACS
aluminium compounds,
gallium arsenide,
III-V semiconductors,
semiconductor quantum wells,
semiconductor heterojunctions,
magnetoresistance,
Brillouin zones,
Fermi surface,
g-factor,
conduction bands
- 73.21.Fg
Quantum wells (electron states/collective excitations) - 68.65.Fg
Quantum wells (structure and nonelectronic properties) - 72.20.My
Galvanomagnetic and other magnetotransport effects (semiconductors/insulators) - 73.40.Kp
Electrical properties of IIIV semiconductor-to-semiconductor contacts, pn junctions, and heterojunctions - YEAR: 2004
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
REFERENCES (13)
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Phys. Rev. 174, 823 (1968) . - For details on how to derive g* from coincidence angles, see S. J. Papadakis, E. P. De Poortere, and M. Shayegan, Phys. Rev. B 59, R12743 (1999). From our data, we expect the l = 2 coincidence to occur at

26°. However, little variation is expected between our
= 0°, 14°, and 26° traces, since the corresponding cos
values are all close to 1. - Recently, a bilayer AlAs QW structure with asymmetric m* and g* has also been demonstrated by K. Vakili, Y. P. Shkolnikov, E. Tutuc, E. P. De Poortere, and M. Shayegan [http://xxx.lanl.gov/abs/cond-mat/0309385 (2003)]. In this device, electrons in one AlAs QW populate the in-plane valley, while electrons in the other QW reside in an out-of-plane valley.







