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Thermal stability of epitaxial SrRuO3 films as a function of oxygen pressure

Appl. Phys. Lett. 84, 4107 (2004); doi:10.1063/1.1753650

Published 5 May 2004

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Ho Nyung Lee, Hans M. Christen, Matthew F. Chisholm, Christopher M. Rouleau, and Douglas H. Lowndes
Condensed Matter Sciences Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
The thermal stability of electrically conducting SrRuO3 thin films grown by pulsed-laser deposition on (001) SrTiO3 substrates has been investigated by atomic force microscopy and reflection high-energy electron diffraction (RHEED) under reducing conditions (25–800 °C in 10–7–10–2 Torr O2). The as-grown SrRuO3 epitaxial films exhibit atomically flat surfaces with single unit-cell steps, even after exposure to air at room temperature. The films remain stable at temperatures as high as 720 °C in moderate oxygen ambients (>1 mTorr), but higher temperature anneals at lower pressures result in the formation of islands and pits due to the decomposition of SrRuO3. Using in situ RHEED, a temperature and oxygen pressure stability map was determined, consistent with a thermally activated decomposition process having an activation energy of 88 kJ/mol. The results can be used to determine the proper conditions for growth of additional epitaxial oxide layers on high quality electrically conducting SrRuO3. ©2004 American Institute of Physics.
History: Received 26 January 2004; accepted 19 March 2004; published 5 May 2004
Permalink: http://link.aip.org/link/?APPLAB/84/4107/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.60.Dv
    Thermal stability of thin films; thermal effects
  • 68.55.Jk
    Thin film structure and morphology; thickness; crystalline orientation and texture
  • 68.37.Ps
    Atomic force microscopy (AFM) of surfaces, interfaces and thin films
  • 68.35.Bs
    Structure of clean solid surfaces (reconstruction)
  • 82.30.Lp
    Decomposition chemical reactions (pyrolysis, dissociation, and fragmentation)
  • 81.15.Fg
    Laser deposition
  • 73.61.Ng
    Electrical properties of insulators (thin films)
  • YEAR: 2004

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ISSN:
0003-6951 (print)   1077-3118 (online)
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