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Comment on "Giant magnetocurrent exceeding 3400% in magnetic tunnel transistors with spin-valve base layers" [Appl. Phys. Lett. 83, 951 (2003)]

Comparison of Fe/Schottky and Fe/Al2O3 tunnel barrier contacts for electrical spin injection into GaAs

Appl. Phys. Lett. 84, 4334 (2004); doi:10.1063/1.1758305

Published 7 May 2004

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O. M. J. van 't Erve, G. Kioseoglou, A. T. Hanbicki, C. H. Li, and B. T. Jonker
Naval Research Laboratory, Washington, D.C. 20375

R. Mallory, M. Yasar, and A. Petrou
State University of New York at Buffalo, Buffalo, New York 14260
We compare electrical spin injection from Fe films into identical GaAs-based light-emitting diodes (LEDs) using different tunnel barriers—a reverse-biased Fe/AlGaAs Schottky contact and an Fe/Al2O3 barrier. Both types of structures are formed in situ using a multichamber molecular-beam epitaxy system. A detailed analysis of the transport data confirms that tunneling occurs in each case. We find that the spin polarization achieved in the GaAs using the Al2O3 barrier is 40% (best case; 30% typical), but the electrical efficiency is significantly lower than that of the Fe Schottky contact. ©2004 American Institute of Physics.
History: Received 5 February 2004; accepted 6 April 2004; published 7 May 2004
Permalink: http://link.aip.org/link/?APPLAB/84/4334/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.60.Jb
    Light-emitting devices
  • 85.30.Kk
    Semiconductor junction diodes
  • 85.30.De
    Semiconductor-device characterization, design, and modeling
  • 73.61.Ey
    Electrical properties of III–V semiconductors (thin films)
  • 78.66.Fd
    Optical properties of III–V semiconductors (thin films)
  • 73.30.+y
    Surface double layers, Schottky barriers, and work functions
  • 72.25.Dc
    Spin polarized transport in semiconductors
  • 72.25.Hg
    Electrical injection of spin polarized carriers
  • YEAR: 2004

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (17)
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  17. Note: Even though the bias condition for both devices are almost identical, the voltage drop across the Schottky barrier and the Al2O3 barrier might be quite different, resulting in a difference in energy for the injected electrons.

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