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We report epitaxial growth of Ge nanopillars (NPs) on Si  (100) by vapor-liquid-solid (VLS) growth from digermane. This growth morphology is characterized by short, low-aspect-ratio pillars ...

Fabrication of 5  nm linewidth and 14  nm pitch features by nanoimprint lithography

Appl. Phys. Lett. 84, 5299 (2004); doi:10.1063/1.1766071

Published 17 June 2004

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Michael D. Austin, Haixiong Ge, Wei Wu, Mingtao Li, Zhaoning Yu, D. Wasserman, S. A. Lyon, and Stephen Y. Chou
Department of Electrical Engineering, Princeton University, New Jersey 08544
We report advances in nanoimprint lithography, its application in nanogap metal contacts, and related fabrication yield. We have demonstrated 5  nm linewidth and 14  nm linepitch in resist using nanoimprint lithography at room temperature with a pressure less than 15  psi. We fabricated gold contacts (for the application of single macromolecule devices) with 5  nm separation by nanoimprint in resist and lift-off of metal. Finally, the uniformity and manufacturability of nanoimprint over a 4  in. wafer were demonstrated. ©2004 American Institute of Physics
History: Received 10 March 2004; accepted 7 May 2004; published 17 June 2004
Permalink: http://link.aip.org/link/?APPLAB/84/5299/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.40.Hp
    Lithography, masks and pattern transfer (microelectronics)
  • 81.16.Nd
    Nanolithography in nanofabrication and processing
  • 81.07.Lk
    Nanocontacts: fabrication and characterization
  • 73.63.Rt
    Nanoscale contacts (electronic transport)
  • 68.55.Jk
    Thin film structure and morphology; thickness; crystalline orientation and texture
  • YEAR: 2004

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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