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Carbon nanotube p-n junction diodes

Appl. Phys. Lett. 85, 145 (2004); doi:10.1063/1.1769595

Issue Date: 5 July 2004

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J. U. Lee, P. P. Gipp, and C. M. Heller
GE Global Research Center, Niskayuna, New York 12309
We demonstrate a single-walled carbon nanotube p-n junction diode device. The p-n junction is formed along a single nanotube by electrostatic doping using a pair of split gate electrodes. By biasing the two gates accordingly, the device can function either as a diode or as an ambipolar field-effect transistor. The diode current–voltage characteristics show forward conduction and reverse blocking characteristics, i.e., rectification. For low bias conditions, the characteristics follow the ideal diode equation with an ideality factor close to one. ©2004 American Institute of Physics
History: Received 1 March 2004; accepted 1 May 2004
Permalink: http://link.aip.org/link/?APPLAB/85/145/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.30.Pq
    Bipolar transistors
  • 85.30.Tv
    Semiconductor field effect devices
  • YEAR: 2004

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (16)
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