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Effects of chemical composition on the optical properties of Zn1–xCdxO thin films

Appl. Phys. Lett. 85, 218 (2004); doi:10.1063/1.1771810

Issue Date: 12 July 2004

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Sang Yeol Lee, Y. Li, Jang-Sik Lee, J. K. Lee, M. Nastasi, S. A. Crooker, and Q. X. Jia
Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545

Hong-Seong Kang and Jeong-Seok Kang
Department of Electrical and Electronic Engineering, Yonsei University, Seoul, 120-749, Korea
Zn1–xCdxO thin films were deposited on (0001) sapphire substrates by pulsed-laser deposition. Structural and optical properties of Zn1–xCdxO films were strongly correlated to the processing conditions. The composition of the films varied nonmonotonically as a function of deposition temperatures due to the difference of vapor pressure between Cd and Zn species. The optical energy bandgap of Zn1–xCdxO thin films, measured by photoluminescence and transmittance, changed from 3.249  to  3.291  eV. The change of the optical properties was mainly attributed to the change of the stoichiometry of Zn1–xCdxO, as determined by Rutherford backscattering spectroscopy. ©2004 American Institute of Physics
History: Received 2 March 2004; accepted 17 May 2004
Permalink: http://link.aip.org/link/?APPLAB/85/218/1
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KEYWORDS and PACS

Keywords
PACS
  • 78.66.Hf
    Optical properties of II–VI semiconductors (thin films)
  • 68.55.Jk
    Thin film structure and morphology; thickness; crystalline orientation and texture
  • 68.55.Ac
    Thin film nucleation and growth: microscopic aspects
  • 78.20.Ci
    Optical constants including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity
  • 78.55.Et
    Photoluminescence in II–VI semiconductors
  • 82.80.Yc
    Rutherford backscattering (RBS), and other methods of chemical analysis
  • 81.15.Fg
    Laser deposition
  • YEAR: 2004

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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