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Spin injection across (110) interfaces: Fe/GaAs(110) spin-light-emitting diodes

Appl. Phys. Lett. 85, 1544 (2004); doi:10.1063/1.1786366

Issue Date: 30 August 2004 | See: Publisher's Note

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C. H. Li, G. Kioseoglou, O. M. J. van 't Erve, A. T. Hanbicki, and B. T. Jonker
Naval Research Laboratory, Washington, DC 20375

R. Mallory, M. Yasar, and A. Petrou
State University of New York at Buffalo, Buffalo, New York 14260
We report electrical spin injection from an Fe contact into a (110)-oriented light-emitting diode (LED) structure, and compare results with data obtained from (001)-oriented structures to address the dependence of spin injection on interface and orientation. Fe/AlGaAs/GaAs LEDs were grown by molecular-beam epitaxy, and processed to form surface emitting structures. Electroluminescence results obtained using a reverse-biased Fe Schottky tunnel barrier injector show that a 13% electron spin polarization is achieved in the GaAs(110) quantum well due to injection across the Fe/AlGaAs(110) interface. Analysis of the transport data indicates that tunneling is a significant transport mechanism at low temperatures. The temperature dependence of the spin polarization is similar to that of (001)-oriented spin LEDs, and is dominated by the GaAs electron spin lifetime. ©2004 American Institute of Physics
History: Received 5 February 2004; accepted 28 June 2004; publisher error corrected 15 September 2004
Permalink: http://link.aip.org/link/?APPLAB/85/1544/1
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ERRATUM

  1. Publisher's Note: "Spin injection across (110) interfaces: Fe/GaAs(110) spin-light-emitting diodes" [Appl. Phys. Lett. 85, 1544 (2004)]
    C. H. Li et al.
    Appl. Phys. Lett. 85, 3939 (2004)

KEYWORDS and PACS

Keywords
PACS
  • 85.60.Jb
    Light-emitting devices
  • 81.05.Ea
    III–V semiconductors: fabrication, treatment, testing and analysis
  • 81.07.St
    Quantum wells: fabrication and characterization
  • 72.25.Mk
    Spin transport through interfaces
  • 73.40.Ns
    Electrical properties of metal–nonmetal contacts
  • 73.30.+y
    Surface double layers, Schottky barriers, and work functions
  • 73.40.Gk
    Tunneling (electronic transport)
  • 78.67.De
    Optical properties of quantum wells
  • 78.60.Fi
    Electroluminescence (condensed matter)
  • 68.65.Fg
    Quantum wells (structure and nonelectronic properties)
  • 81.15.Hi
    Molecular, atomic, ion, and chemical beam epitaxy
  • 85.35.Be
    Quantum well devices including quantum dots, quantum wires, etc
  • 72.20.Jv
    Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators)
  • YEAR: 2004

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
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REFERENCES (18)
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