Time-resolved detection of individual electrons in a quantum dot
Appl. Phys. Lett. 85, 2005 (2004); doi:10.1063/1.1784875
Issue Date: 13 September 2004
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We present measurements on a quantum dot and a nearby, capacitively coupled, quantum point contact used as a charge detector. With the dot being weakly coupled to only a single reservoir, the transfer of individual electrons onto and off the dot can be observed in real time in the current signal from the quantum point contact. From these time-dependent traces, the quantum mechanical coupling between dot and reservoir can be extracted quantitatively. A similar analysis allows the determination of the occupation probability of the dot states.
©2004 American Institute of Physics
| History: | Received 12 April 2004; accepted 22 June 2004 |
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http://link.aip.org/link/?APPLAB/85/2005/1 |
KEYWORDS and PACS
aluminium compounds,
gallium arsenide,
III-V semiconductors,
semiconductor quantum dots,
quantum point contacts,
electric admittance,
atomic force microscopy
- 73.40.Lq
Electrical properties of other semiconductor-to-semiconductor contacts, pn junctions, and heterojunctions excluding IIIV semiconductor-to-semiconductor - 68.37.Ps
Atomic force microscopy (AFM) of surfaces, interfaces and thin films - 73.61.Ey
Electrical properties of IIIV semiconductors (thin films) - YEAR: 2004
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
REFERENCES (15)
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