Junction–temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage method
A theoretical model for the dependence of the diode forward voltage (Vf) on junction temperature (Tj) is developed. An expression for dVf/dT is derived that takes into account all relevant contributio...
A theoretical model for the dependence of the diode forward voltage (Vf) on junction temperature (Tj) is developed. An expression for dVf/dT is derived that takes into account all relevant contributio...
All-epitaxial mode-confined vertical-cavity surface-emitting laser
A type of AlGaAs/GaAs-based vertical-cavity surface-emitting laser is demonstrated that creates a strongly-confined optical mode in an all-epitaxial heterostructure. The mode-confining region in this ...
A type of AlGaAs/GaAs-based vertical-cavity surface-emitting laser is demonstrated that creates a strongly-confined optical mode in an all-epitaxial heterostructure. The mode-confining region in this ...
Continuous-wave operation of 
~4.8 µm quantum-cascade lasers at room temperature
Appl. Phys. Lett. 85, 2166 (2004); doi:10.1063/1.1793340
Issue Date: 20 September 2004
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Continuous-wave (cw) operation of quantum-cascade lasers emitting at ~4.8 µm is reported up to a temperature of 323 K. Accurate control of layer thickness and strain-balanced material composition is demonstrated using x-ray diffraction. cw output power is reported to be in excess of 370 mW per facet at 293 K, and 38 mW per facet at 323 K. Room-temperature average power measurements are demonstrated with over 600 mW per facet at 50% duty cycle with over 300 mW still observed at 100% (cw) duty cycle.
©2004 American Institute of Physics
~4.8 µm is reported up to a temperature of 323 K. Accurate control of layer thickness and strain-balanced material composition is demonstrated using x-ray diffraction. cw output power is reported to be in excess of 370 mW per facet at 293 K, and 38 mW per facet at 323 K. Room-temperature average power measurements are demonstrated with over 600 mW per facet at 50% duty cycle with over 300 mW still observed at 100% (cw) duty cycle.
©2004 American Institute of Physics
| History: | Received 7 May 2004; accepted 14 July 2004 |
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0003-6951 (print)
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- J. Faist, F. Capasso, D. L. Sivco, C. Sitori, A. L. Hutchinson, and A. Y. Cho,
Science 264, 553 (1994) . - S. Slivken, Z. Huang, A. Evans, and M. Razeghi, Appl. Phys. Lett. 80, 4091 (2002).
- J. S. Yu, S. Slivken, A. Evans, J. David, and M. Razeghi, Appl. Phys. Lett. 82, 3397 (2003).
- J. S. Yu, A. Evans, J. David, L. Doris, S. Slivken, and M. Razeghi, Appl. Phys. Lett. 83, 5136 (2003).
- A. Evans, J. S. Yu, S. Slivken, J. David, and M. Razeghi, Appl. Phys. Lett. 84, 314 (2004).
- J. S. Yu, A. Evans, J. David, L. Doris, S. Slivken, and M. Razeghi,
IEEE Photonics Technol. Lett. 16, 747 (2004) . - M. Beck, D. Hofstetter, T. Aellen, J. Faist, U. Oesterle, M. Ilgems, E. Gini, and H. Melchior,
Science 295, 301 (2002) . - D. Hofstetter, M. Beck, T. Aellen, and J. Faist, Appl. Phys. Lett. 78, 396 (2001).
- S. Slivken, A. Evans, J. David, and M. Razeghi, Appl. Phys. Lett. 81, 4321 (2002).
