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Does the local built-in potential on grain boundaries of Cu(In,Ga)Se2 thin films benefit photovoltaic performance of the device?
In a previous paper [C.-S. Jiang et al., Appl. Phys. Lett. 84, 3477 (2004)], we reported the existence of a local built-in potential on grain boundaries (GBs) of photovoltaic Cu(In,Ga)Se2 (CIGS) thin ...

Silicon optical nanocrystal memory

Appl. Phys. Lett. 85, 2622 (2004); doi:10.1063/1.1795364

Issue Date: 27 September 2004

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R. J. Walters, P. G. Kik, J. D. Casperson, and H. A. Atwater
Thomas J. Watson Laboratories of Applied Physics, California Institute of Technology, Pasadena, California 91125

R. Lindstedt, M. Giorgi, and G. Bourianoff
Intel Corporation, Hillsboro, Oregon 97124
We describe the operation of a silicon optical nanocrystal memory device. The programmed logic state of the device is read optically by the detection of high or low photoluminescence intensity. The suppression of excitonic photoluminescence is attributed to the onset of fast nonradiative Auger recombination in the presence of an excess charge carrier. The device can be programmed and erased electrically via charge injection and optically via internal photoemission. Photoluminescence suppression of up to 80% is demonstrated with data retention times of up to several minutes at room temperature. ©2004 American Institute of Physics
History: Received 19 January 2004; accepted 22 July 2004
Permalink: http://link.aip.org/link/?APPLAB/85/2622/1
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KEYWORDS and PACS

Keywords
PACS
  • 42.79.Vb
    Optical storage systems, optical disks
  • 79.20.Fv
    Electron-surface impact: Auger emission
  • 78.55.Ap
    Photoluminescence in elemental semiconductors
  • 85.30.-z
    Semiconductor devices
  • 42.70.Ln
    Holographic recording materials; optical storage media
  • YEAR: 2004

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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