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Transport properties of highly conductive n-type Al-rich AlxGa1–xN  (x>=0.7)
We report here the growth and transport studies of conductive n-type AlxGa1–xN alloys with high Al contents (x0.7). Si-doped AlxGa1–xN alloys were grown by metalorganic chemical vapor deposi...

Giant low-temperature piezoresistance effect in AlAs two-dimensional electrons

Appl. Phys. Lett. 85, 3766 (2004); doi:10.1063/1.1808883

Issue Date: 25 October 2004

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Y. P. Shkolnikov, K. Vakili, E. P. De Poortere, and M. Shayegan
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
We present piezoresistance measurements in modulation doped AlAs quantum wells where the two-dimensional electron system occupies two conduction band valleys with elliptical Fermi contours. Our data demonstrate that, at low temperatures, the strain gauge factor (the fractional change in resistance divided by the sample's fractional length change) in this system exceeds 10 000. Moreover, in the presence of a moderate magnetic field perpendicular to the plane of the two-dimensional system, gauge factors up to 56 000 can be achieved. The piezoresistance data can be explained qualitatively by a simple model that takes into account intervalley charge transfer. ©2004 American Institute of Physics
History: Received 24 May 2004; accepted 24 August 2004
Permalink: http://link.aip.org/link/?APPLAB/85/3766/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.63.Hs
    Quantum wells (electronic transport)
  • 73.21.Fg
    Quantum wells (electron states/collective excitations)
  • 71.70.Di
    Landau levels (condensed matter)
  • YEAR: 2004

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ISSN:
0003-6951 (print)   1077-3118 (online)
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