Spectroscopic second harmonic generation measured on plasma-deposited hydrogenated amorphous silicon thin films
Appl. Phys. Lett. 85, 4049 (2004); doi:10.1063/1.1812836
Issue Date: 1 November 2004
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Optical second harmonic generation (SHG) has been measured for plasma-deposited thin films of hydrogenated amorphous silicon (a-Si:H) at different polarization states for pump photon energies between 1.0 and 1.7 eV. Distinct resonance peaks are observed in this energy range and it is shown that the SH signal originates from an isotropic contribution at both the film-surface and substrate-interface region. The possibility that the SH signal originates from surface and interface dangling bond states of a-Si:H is discussed.
©2004 American Institute of Physics
| History: | Received 6 April 2004; accepted 14 September 2004 |
| Permalink: |
http://link.aip.org/link/?APPLAB/85/4049/1 |
KEYWORDS and PACS
silicon,
elemental semiconductors,
amorphous semiconductors,
semiconductor thin films,
optical harmonic generation,
dangling bonds,
plasma CVD,
interface states,
hydrogen,
surface states
- 81.05.Cy
Elemental semiconductors: fabrication, treatment, testing and analysis - 68.55.Jk
Thin film structure and morphology; thickness; crystalline orientation and texture - 42.65.Ky
Optical frequency conversion; optical harmonic generation, including higher-order harmonic generation - 71.55.Cn
Impurity and defect levels in elemental semiconductors - 73.20.At
Surface states, band structure, electron density of states - 78.66.Jg
Optical properties of amorphous semiconductors; glasses (thin films) - 78.66.Db
Optical properties of elemental semiconductors and insulators (thin films) - YEAR: 2004
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
REFERENCES (11)
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