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Spectroscopic second harmonic generation measured on plasma-deposited hydrogenated amorphous silicon thin films

Appl. Phys. Lett. 85, 4049 (2004); doi:10.1063/1.1812836

Issue Date: 1 November 2004

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W. M. M. Kessels, J. J. H. Gielis, I. M. P. Aarts, C. M. Leewis, and M. C. M. van de Sanden
Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
Optical second harmonic generation (SHG) has been measured for plasma-deposited thin films of hydrogenated amorphous silicon (a-Si:H) at different polarization states for pump photon energies between 1.0 and 1.7  eV. Distinct resonance peaks are observed in this energy range and it is shown that the SH signal originates from an isotropic contribution at both the film-surface and substrate-interface region. The possibility that the SH signal originates from surface and interface dangling bond states of a-Si:H is discussed. ©2004 American Institute of Physics
History: Received 6 April 2004; accepted 14 September 2004
Permalink: http://link.aip.org/link/?APPLAB/85/4049/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.05.Cy
    Elemental semiconductors: fabrication, treatment, testing and analysis
  • 68.55.Jk
    Thin film structure and morphology; thickness; crystalline orientation and texture
  • 42.65.Ky
    Optical frequency conversion; optical harmonic generation, including higher-order harmonic generation
  • 71.55.Cn
    Impurity and defect levels in elemental semiconductors
  • 73.20.At
    Surface states, band structure, electron density of states
  • 78.66.Jg
    Optical properties of amorphous semiconductors; glasses (thin films)
  • 78.66.Db
    Optical properties of elemental semiconductors and insulators (thin films)
  • YEAR: 2004

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (11)

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