Applied Physics Letters
Feedback | Help | Exit
Applied Physics Letters
Search:
   
 
 
 
Previous Article
Power broadening of the exciton linewidth in a single InGaAs/GaAs quantum dot
We use high-resolution photocurrent spectroscopy to investigate the ground state of a single quantum dot. In the limit of low optical excitation power, we observe a ground state linewidth down to 4&nb...
Next Article
Kinetic study of velocity distributions in nanoscale semiconductor devices under room-temperature operation
Quasiballistic electron transport in nanoscale semiconductor structures is investigated to clarify the importance of scatterings under room-temperature operation as reflected in the velocity distribut...

Organic complementary-like inverters employing methanofullerene-based ambipolar field-effect transistors

Appl. Phys. Lett. 85, 4205 (2004); doi:10.1063/1.1812577

Issue Date: 1 November 2004

You are not logged in to this journal. Log in

Thomas D. Anthopoulos, Dago M. de Leeuw, Eugenio Cantatore, Sepas Setayesh, and Eduard J. Meijer
Philips Research Laboratories, Prof. Holstlaan 4 (WAG), 5656 AA Eindhoven, The Netherlands

Cristina Tanase, Jan C. Hummelen, and Paul W. M. Blom
Molecular Electronics, Materials Science Centre Plus, University of Groningen, Nijenborgh 4 9747 AG Groningen, The Netherlands
We demonstrate a complementary-like inverter comprised of two identical ambipolar field-effect transistors based on the solution processable methanofullerene [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The transistors are capable of operating in both the p- and n-channel regimes depending upon the bias conditions. However, in the p-channel regime transistor operation is severely contact limited. We attribute this to the presence of a large injection barrier for holes at the Au/PCBM interface. Despite this barrier the inverter operates in both the first and third quadrant of the voltage output versus voltage input plot exhibiting a maximum gain in the order of 20. Since the inverter represents the basic building block of most logic circuits we anticipate that other complementary-like circuits can be realized by this approach. ©2004 American Institute of Physics
History: Received 9 July 2004; accepted 13 September 2004
Permalink: http://link.aip.org/link/?APPLAB/85/4205/1
BUY THIS ARTICLE   (US$24)
Download HTML Download Sectioned HTML Download PDF (68 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 85.30.Tv
    Semiconductor field effect devices
  • 73.40.Cg
    Contact resistance, contact potential
  • 84.30.Sk
    Pulse and digital circuits
  • YEAR: 2004

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (19)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. D. Voss, Nature (London) 407, 442 (2000).
  2. N. D. Young, R. M. Bunn, R. W. Wilks, D. J. McCulloch, S. C. Deane, M. J. Edwards, G. Harkin, and A. Pearson, J. Soc. Inf. Disp. 5/3, 275 (1997).
  3. H. Sirringhaus, N. Tessler, and R. H. Friend, Science 280, 1741 (1998).
  4. G. H. Gelinck, H. E. A. Huitema, E. van Veenendaal, E. Cantatore, L. Schrijnemakers, J. B. P. H. van der Putten, T. C. T. Geuns, M. Beenhakkers, J. B. Giesbers, B.-H. Huisman, E. J. Meijer, E. M. Benito, F. J. Touwslager, A. W. Marsman, B. J. E. van Rens, and D. M. de Leeuw, Nat. Mater. 3, 106 (2004).
  5. C. J. Drury, C. M. Mutsaers, C. M. Hart, M. Matters, and D. M. de Leeuw, Appl. Phys. Lett. 73, 108 (1998).
  6. B. Crone, A. Dodabalapur, Y.-Y. Lin, R. W. Fillas, Z. Bao, A. LaDuca, R. Sarpeshkar, H. E. Katz, and W. Li, Nature (London) 403, 521 (2000).
  7. E. J. Meijer, D. M. de Leeuw, S. Setayesh, E. Van Veenendaal, B.-H. Huisman, P. W. M. Blom, J. C. Hummelen, U. Scherf, and T. M. Klapwijk, Nat. Mater. 2, 678 (2003).
  8. A. Dodabalapur, H. E. Katz, L. Torsi, and R. C. Haddon, Appl. Phys. Lett. 68, 1108 (1996).
  9. K. Tada, H. Harada, and K. Yoshino, Jpn. J. Appl. Phys., Part 2 35, L944 (1996).
  10. R. J. Chesterfield, C. R. Newman, T. M. Pappenfus, P. C. Ewbank, M. H. Haukaas, K. R. Mann, L. L. Miller, and C. D. Frisbie, Adv. Mater. (Weinheim, Ger.) 15, 1278 (2003).
  11. R. C. Haddon, A. S. Perel, R. C. Morris, T. T. M. Palstra, A. F. Hebard, and R. M. Fleming, Appl. Phys. Lett. 67, 121 (1995).
  12. A. R. Brown, A. Pomp, C. M. Hart, and D. M. de Leeuw, Science 270, 972 (1995).
  13. C. D. Dimitrakopoulos and P. R. L. Malenfant, Adv. Mater. (Weinheim, Ger.) 14, 99 (2002).
  14. T.D. Anthopoulos, C. Tanase, S. Setayesh, E.J. Meijer, J.C. Hummelen, P.W. M. Blom, and D.M. de Leeuw, Adv. Mater. (Weinheim, Ger.) (to be published).
  15. E. J. Meijer, C. Detcheverry, P. J. Baesjou, E. van Veenendaal, D. M. de Leeuw, and T. M. Klapwijk, J. Appl. Phys. 93, 4831 (2003).
  16. J. Zaumseil, K. W. Baldwin, and J. A. Rogers, Appl. Phys. Lett. 93, 6117 (2003).
  17. E. J. Meijer, G. H. Gelinck, E. Van Veenendaal, B.-H. Huisman, D. M. de Leeuw, and T. M. Klapwijk, Appl. Phys. Lett. 82, 4576 (2003).
  18. B. H. Hamadani and D. Natelson, Appl. Phys. Lett. 84, 443 (2004).
  19. J. K. J. van Duren, V. D. Mihailetchi, P. W. M. Blom, T. van Woudenbergh, J. C. Hummelen, M. T. Rispens, R. A. J. Janssen, and M. M. Wienk, J. Appl. Phys. 94, 4477 (2003).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics