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Avalanche spin-valve transistor

Appl. Phys. Lett. 85, 4502 (2004); doi:10.1063/1.1818339

Issue Date: 8 November 2004

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K. J. Russell, Ian Appelbaum, Wei Yi, D. J. Monsma, F. Capasso, C. M. Marcus, and V. Narayanamurti
Gordon McKay Laboratory, Harvard University, Cambridge, Massachusetts 02138

M. P. Hanson and A. C. Gossard
Materials Department, University of California, Santa Barbara, California 93106
A spin-valve transistor with a GaAs/AlGaAs avalanche-multiplying collector is demonstrated with >1000% magnetocurrent variation and [approximate]35× amplification of the collector current. The intrinsic amplification of the magnetic-field sensitive collector current should allow fabrication of spin-valve transistors with high gain in a variety of materials. ©2004 American Institute of Physics
History: Received 11 June 2004; accepted 10 September 2004
Permalink: http://link.aip.org/link/?APPLAB/85/4502/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.30.Pq
    Bipolar transistors
  • 85.80.Jm
    Magnetoelectric devices
  • 75.47.Jn
    Ballistic magnetoresistance
  • 85.70.Ay
    Magnetic device characterization, design, and modeling
  • YEAR: 2004

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (19)
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