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Origin of ultraviolet photoluminescence in ZnO quantum dots: Confined excitons versus surface-bound impurity exciton complexes

Appl. Phys. Lett. 85, 5971 (2004); doi:10.1063/1.1835992

Issue Date: 13 December 2004

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Vladimir A. Fonoberov and Alexander A. Balandin
Nano-Device Laboratory, Department of Electrical Engineering, University of California-Riverside, Riverside, California 92521
We have theoretically investigated the origin of ultraviolet photoluminescence (PL) in ZnO quantum dots with diameters from 2 to 6 nm. Two possible sources of ultraviolet PL have been considered: excitons confined in the quantum dot and excitons bound to an ionized impurity located at the quantum-dot surface. It is found that depending on the fabrication method and surface passivation technique, the ultraviolet PL of ZnO quantum dots can be attributed to either confined excitons or surface-bound ionized acceptor-exciton complexes. The exciton radiative lifetime is shown to be very sensitive to the exciton localization and can be used as a tool to discriminate between these two sources of PL. ©2004 American Institute of Physics
History: Received 16 June 2004; accepted 20 October 2004
Permalink: http://link.aip.org/link/?APPLAB/85/5971/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.21.La
    Quantum dots (electron states/collective excitations)
  • 78.67.Hc
    Optical properties of quantum dots
  • 78.55.Et
    Photoluminescence in II–VI semiconductors
  • 71.55.Gs
    Impurity and defect levels in II–VI semiconductors
  • 81.65.Rv
    Surface passivation
  • YEAR: 2004

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ISSN:
0003-6951 (print)   1077-3118 (online)
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