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In situ measurements of the critical thickness for strain relaxation in AlGaN/GaN heterostructures

Appl. Phys. Lett. 85, 6164 (2004); doi:10.1063/1.1840111

Issue Date: 20 December 2004

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S. R. Lee, D. D. Koleske, K. C. Cross, J. A. Floro, and K. E. Waldrip
Sandia National Laboratories, Albuquerque, New Mexico 87185-0601

A. T. Wise and S. Mahajan
Department of Chemical and Materials Engineering, Arizona State University, Tempe, Arizona 85287-6006
Using in situ wafer-curvature measurements of thin-film stress, we determine the critical thickness for strain relaxation in AlxGa1–xN/GaN heterostructures with 0.14<=x<=1. The surface morphology of selected films is examined by atomic force microscopy. Comparison of these measurements with critical-thickness models for brittle fracture and dislocation glide suggests that the onset of strain relaxation occurs by surface fracture for all compositions. Misfit-dislocations follow initial fracture, with slip-system selection occurring under the influence of composition-dependent changes in surface morphology. ©2004 American Institute of Physics
History: Received 1 July 2004; accepted 25 October 2004
Permalink: http://link.aip.org/link/?APPLAB/85/6164/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.05.Ea
    III–V semiconductors: fabrication, treatment, testing and analysis
  • 62.40.+i
    Anelasticity, internal friction, stress relaxation, and mechanical resonances
  • 68.37.Ps
    Atomic force microscopy (AFM) of surfaces, interfaces and thin films
  • 68.60.Bs
    Mechanical and acoustical properties of thin films
  • 62.20.Mk
    Fatigue, brittleness, fracture, and cracks
  • 61.72.Hh
    Indirect evidence of dislocations and other defects including resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.
  • YEAR: 2004

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (15)
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