Applied Physics Letters
Feedback | Help | Exit
Applied Physics Letters
Search:
   
 
 
 
Previous Article
An organic thin-film transistor of high mobility by dielectric surface modification with organic molecule
Organic thin-film transistors (OTFTs) based on pentacene semiconductor are elaborated on the plastic substrates through a four-level mask process without photolithographic patterning to yield a simple...
Next Article
Highly transparent Ag/SnO2 ohmic contact to p-type GaN for ultraviolet light-emitting diodes
We report on the formation of highly transparent and low-resistance Ag(3  nm)/Sb-doped SnO2 (ATO) (200  nm) ohmic contacts to p-GaN (5×1017  cm–3). It is shown...

Metal/semiconductor phase transition in chromium nitride(001) grown by rf-plasma-assisted molecular-beam epitaxy

Appl. Phys. Lett. 85, 6371 (2004); doi:10.1063/1.1836878

Issue Date: 27 December 2004

You are not logged in to this journal. Log in

Costel Constantin, Muhammad B. Haider, David Ingram, and Arthur R. Smith
Condensed Matter and Surface Science Program, Department of Physics and Astronomy, Ohio University, Athens, Ohio 45701
Structural and electronic properties of stoichiometric single-phase CrN(001) thin films grown on MgO(001) substrates by radio-frequency N plasma-assisted molecular-beam epitaxy, are investigated. In situ room-temperature scanning tunneling microscopy clearly shows the 1×1 atomic periodicity of the crystal structure as well as long-range topographic distortions which are characteristic of a semiconductor surface. This semiconductor behavior is consistent with ex situ resistivity measurements over the range 285 K and higher, whereas below 260 K, metallic behavior is observed. The resistivity-derived band gap for the high-temperature region, 71 meV, is consistent with the tunneling spectroscopy results. The observed electronic (semiconductor/metal) transition temperature coincides with the temperature of the known coincident magnetic (para-antiferro) and structural (cubic-orthorhombic) phase transitions. ©2004 American Institute of Physics
History: Received 15 June 2004; accepted 20 October 2004
Permalink: http://link.aip.org/link/?APPLAB/85/6371/1
BUY THIS ARTICLE   (US$24)
Download HTML Download Sectioned HTML Download PDF (230 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 71.30.+h
    Metal–insulator transitions and other electronic transitions
  • 75.30.Kz
    Magnetic phase boundaries including magnetic transitions, metamagnetism, etc
  • 64.70.Kb
    Solid–solid transitions
  • 81.30.Hd
    Constant-composition solid–solid phase transformations: polymorphic, massive, and order–disorder
  • 68.55.Ac
    Thin film nucleation and growth: microscopic aspects
  • 68.55.Jk
    Thin film structure and morphology; thickness; crystalline orientation and texture
  • 68.55.Nq
    Thin film composition and phase identification
  • 81.15.Hi
    Molecular, atomic, ion, and chemical beam epitaxy
  • 68.37.Ef
    Scanning tunneling microscopy of surfaces, interfaces and thin films including chemistry induced with STM
  • YEAR: 2004

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (18)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. U. Wiklund, M. Bromark, M. Larsson, P. Hedenqvist, and S. Hogmark, Surf. Coat. Technol. 91, 57 (1997).
  2. C. Nouveau, M. A. Djouadi, O. Banakh, R. Sanjinés, and F. Lévy, Thin Solid Films 398, 490 (2001).
  3. L. M. Corliss, N. Elliott, and J. M. Hastings, Phys. Rev. 117, 929 (1960).
  4. M. N. Eddine, F. Sayetat, and E. F. Bertaut, C. R. Seances Acad. Sci., Ser. B 269, 574 (1969).
  5. A. Filippetti, W. E. Picket, and B. M. Klein, Phys. Rev. B 59, 7043 (1999).
  6. A. Filippetti and N. A. Hill, Phys. Rev. Lett. 85, 5166 (2000).
  7. J. D. Browne, P. R. Liddell, R. Street, and T. Millis, Phys. Status Solidi 1, 715 (1970).
  8. P. S. Herle, M. S. Hedge, N. Y. Vasathacharya, S. Philip, M. V. R. Rao, and T. Sripathi, J. Solid State Chem. 134, 120 (1997).
  9. D. Gall, C. S. Shin, R. T. Spila, M. Odén, M. J. H. Senna, J. E. Greene, and I. Petrov, J. Appl. Phys. 91, 3589 (2002).
  10. D. Gall, C. S. Shin, R. T. Haasch, I. Petrov, and J. E. Greene, J. Appl. Phys. 91, 5882 (2002).
  11. P. Hones, M. Diserens, R. Sanjines, and F. Levy, J. Vac. Sci. Technol. B 18, 2851 (2000).
  12. P. M. Fabis, R. A. Cooke, and S. McDonough, J. Vac. Sci. Technol. A 8, 3819 (1990).
  13. H. A. Al-Brithen and A. R. Smith, Phys. Rev. B 70, 045303 (2004).
  14. K. -J. Chao, A. R. Smith, and C. K. Shih, Phys. Rev. B 53, 6935 (1996).
  15. H. Yang, H. Al-Brithen, A. R. Smith, J. A. Borchers, R. L. Cappelletti, and M. D. Vaudin, Appl. Phys. Lett. 78, 3860 (2001).
  16. J. A. Stroscio, R. M. Feenstra, and A. P. Fein, Phys. Rev. Lett. 58, 1668 (1987).
  17. R. M. Feenstra, Phys. Rev. B 50, 4561 (1994).
  18. Y. Tsuchiya, K. Kosuge, Y. Ikeda, T. Shigematsu, S. Yamaguchi, and N. Nakayama, Mater. Trans., JIM 37, 121 (1996).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics