Metal/semiconductor phase transition in chromium nitride(001) grown by rf-plasma-assisted molecular-beam epitaxy
Appl. Phys. Lett. 85, 6371 (2004); doi:10.1063/1.1836878
Issue Date: 27 December 2004
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Structural and electronic properties of stoichiometric single-phase CrN(001) thin films grown on MgO(001) substrates by radio-frequency N plasma-assisted molecular-beam epitaxy, are investigated. In situ room-temperature scanning tunneling microscopy clearly shows the 1×1 atomic periodicity of the crystal structure as well as long-range topographic distortions which are characteristic of a semiconductor surface. This semiconductor behavior is consistent with ex situ resistivity measurements over the range 285 K and higher, whereas below 260 K, metallic behavior is observed. The resistivity-derived band gap for the high-temperature region, 71 meV, is consistent with the tunneling spectroscopy results. The observed electronic (semiconductor/metal) transition temperature coincides with the temperature of the known coincident magnetic (para-antiferro) and structural (cubic-orthorhombic) phase transitions.
©2004 American Institute of Physics
| History: | Received 15 June 2004; accepted 20 October 2004 |
| Permalink: |
http://link.aip.org/link/?APPLAB/85/6371/1 |
KEYWORDS and PACS
chromium compounds,
paramagnetic materials,
paramagnetic-antiferromagnetic transitions,
solid-state phase transformations,
metal-insulator transition,
molecular beam epitaxial growth,
scanning tunnelling microscopy,
thin films,
stoichiometry
- 71.30.+h
Metalinsulator transitions and other electronic transitions - 75.30.Kz
Magnetic phase boundaries including magnetic transitions, metamagnetism, etc - 64.70.Kb
Solidsolid transitions - 81.30.Hd
Constant-composition solidsolid phase transformations: polymorphic, massive, and orderdisorder - 68.55.Ac
Thin film nucleation and growth: microscopic aspects - 68.55.Jk
Thin film structure and morphology; thickness; crystalline orientation and texture - 68.55.Nq
Thin film composition and phase identification - 81.15.Hi
Molecular, atomic, ion, and chemical beam epitaxy - 68.37.Ef
Scanning tunneling microscopy of surfaces, interfaces and thin films including chemistry induced with STM - YEAR: 2004
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
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