320×256 solar-blind focal plane arrays based on AlxGa1xN
Appl. Phys. Lett. 86, 011117 (2005); doi:10.1063/1.1846936
Published 27 December 2004
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We report AlGaN-based backilluminated solar-blind ultraviolet focal plane arrays operating at a wavelength of 280 nm. The electrical characteristics of the individual pixels are discussed, and the uniformity of the array is presented. The pin photodiode array was hybridized to a 320×256 read-out integrated circuit entirely within our university research lab, and a working 320×256 camera was demonstrated. Several example solar-blind images from the camera are also provided.
©2005 American Institute of Physics
| History: | Received 10 September 2004; accepted 18 November 2004; published 27 December 2004 |
| Permalink: |
http://link.aip.org/link/?APPLAB/86/011117/1 |
KEYWORDS and PACS
aluminium compounds,
gallium compounds,
III-V semiconductors,
wide band gap semiconductors,
semiconductor thin films,
p-i-n photodiodes,
focal planes,
smart pixels,
ultraviolet radiation effects,
leakage currents,
electrical conductivity
- 42.79.Pw
Imaging detectors and sensors - 85.60.Dw
Photodiodes; phototransistors; photoresistors - 61.80.Ba
Ultraviolet, visible, and infrared radiation effects including laser radiation - 61.82.Fk
Radiation effects on semiconductors - 73.61.Ey
Electrical properties of IIIV semiconductors (thin films) - YEAR: 2005
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
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