Zeeman splitting in ferromagnetic Schottky barrier contacts based on doped EuS
Appl. Phys. Lett. 86, 012501 (2005); doi:10.1063/1.1842857
Published 23 December 2004
You are not logged in to this journal. Log in
Schottky barrier contacts of nonstoichiometric EuS, a ferromagnetic semiconductor, have been fabricated on Si (100) substrate and the currentvoltage (IV) characteristics are investigated at temperatures 1505.0 K. The electrical transport across such Schottky contacts is found to be dominated by thermionic emission at high temperatures, while at low temperatures and low biases, electron tunneling is dominant. The lower bound estimate of the Schottky barrier heights was obtained by analyzing the high-bias currentvoltage characteristics. A decrease in barrier height of 0.26±0.06 eV was deduced from the IV characteristics as the temperature decreases below the ferromagnetic ordering temperature (TC) of the EuS. The variation of the barrier height below TC is the result of a spontaneous Zeeman splitting of the conduction band, and its temperature dependence resembles that of the spontaneous moment in EuS. The results point to the plausibility of using doped EuS as a spin injector and detector.
©2005 American Institute of Physics
| History: | Received 23 July 2004; accepted 28 October 2004; published 23 December 2004 |
| Permalink: |
http://link.aip.org/link/?APPLAB/86/012501/1 |
KEYWORDS and PACS
europium compounds,
gold,
magnetic semiconductors,
magnetic thin films,
ferromagnetic materials,
semiconductor thin films,
semiconductor-metal boundaries,
Schottky barriers,
Zeeman effect,
conduction bands,
energy gap,
magnetisation,
magnetic moments,
electrodes,
Curie temperature
- 75.50.Pp
Magnetic semiconductors - 75.50.Dd
Nonmetallic ferromagnetic materials - 73.30.+y
Surface double layers, Schottky barriers, and work functions - 71.70.Ej
Spinorbit coupling, Zeeman and Stark splitting, JahnTeller effect (condensed matter) - 75.70.Cn
Magnetic properties of interfaces (multilayers, superlattices, heterostructures) - 73.40.Ns
Electrical properties of metalnonmetal contacts - 73.20.At
Surface states, band structure, electron density of states - 75.60.Ej
Magnetization curves, hysteresis, Barkhausen and related effects - 75.30.Cr
Saturation moments and magnetic susceptibilities in magnetically ordered materials - 75.40.Cx
Static properties of magnetic materials including order parameter, static susceptibility, heat capacities, critical exponents, etc - YEAR: 2005
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
REFERENCES (20)
For access to fully linked references, you need to log in.
For access to fully linked references, you need to Log in.
- G. Schmidt, D. Ferrand, L. Molenkamp, A. T. Filip, and J. van Wees, Phys. Rev. B 62, R4790 (2000).
- A. Fert and H. Jaffrés, Phys. Rev. B 64, 184420 (2001).
- T. Dietl, H. Ohno, and F. Matsukura
Science 287, 1019 (2000) . - Y. Ohno,
Science 281, 951 (1998) ;
H. Ohno, F. Matsukura, and Y. Ohno, - For a review, see For a review, see A. Mauger and C. Godart,
Phys. Rep. 141, 51 (1986) . - I. Esaki, P. J. Stiles, and S. von Molnár, Phys. Rev. Lett. 19, 852 (1967).
- J. S. Moodera, X. Hao, G. A. Gibson, and R. Meservey, Phys. Rev. Lett. 61, 637 (1988);
- S. von Molnár and T. Kasuya,
Phys. Rev. Lett. 21, 1757 (1968) . - P. Fumagalli, A. Schirmeisen, and R. J. Gambino, Phys. Rev. B 57, 14294 (1998).
- J. Keller, J. S. Parker, J. Stankiewicz, D. E. Read, P. A. Stampe, R. J. Kennedy, P. Xiong, and S. von Molnár,
IEEE Trans. Magn. 38, 2673 (2002) . - I. J. Guilaran, D. E. Read, R. L. Kallaher, P. Xiong, S. von Molnár, P. A. Stampe, R. J. Kennedy, and J. Keller, Phys. Rev. B 68, 144424 (2003).
- S.M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
- W.A. Thompson, T. Penney, S. Kirkpatrick, and F. Holtzberg, Proceeding of the 11th International Conference on Physics of Semicondutors, Warsaw, 1972, p. 1255.
- F. A. Padovani and G. G. Sumner, J. Appl. Phys. 36, 3744 (1965).
- E.H. Rhoderick and R.H. Williams, Metals Semiconductor Contacts, 2nd ed. (Clarendon, Oxford, 1988.
- R. C. Dynes, V. Narayanamurti, and J. P. Garno, Phys. Rev. Lett. 41, 1509 (1978).
- J.G. Simmons, Tunnelling in Solids, edited by E. Burstein and S. Lundqvist (Plenum, New York, 1969).
- N. Lebedeva and P. Kuivalainen, J. Appl. Phys. 93, 9845 (2003).
- J. H. Werner and H. H. Güttler, J. Appl. Phys. 69, 1522 (1991).
- R. T. Tung, Phys. Rev. B 45, 13509 (1992).







