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Effect of film thickness on the incorporation of Mn interstitials in Ga1–xMnxAs

Appl. Phys. Lett. 86, 042102 (2005); doi:10.1063/1.1855430

Published 18 January 2005

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K. M. Yu and W. Walukiewicz
Electronic Materials Program, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720

T. Wojtowicz
Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland and Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556

J. Denlinger
Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720

M. A. Scarpulla
Department of Materials Science & Engineering, University of California, Berkeley, California 94720

X. Liu and J. K. Furdyna
Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556
We have investigated the effect of film thickness on the distribution of Mn atoms at various lattice sites in Ga1–xMnxAs thin films. We find that the growth surface acts as a sink facilitating the outdiffusion of Mn interstitials (MnI), and thus reducing its concentration in the film. The outdiffused MnI accumulate on the surface in a surface oxide layer and do not participate in the ferromagnetism of the film. For thin films less than 15 nm thick, no MnI can be detected. Because of the absence of compensating MnI defects, higher TC can be achieved for such extremely thin Ga1–xMnxAs layers. These results agree with our previously suggested Fermi-level-governed upper limit of the TC of III–Mn–V ferromagnetic semiconductors. ©2005 American Institute of Physics
History: Received 7 October 2004; accepted 8 December 2004; published 18 January 2005
Permalink: http://link.aip.org/link/?APPLAB/86/042102/1
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KEYWORDS and PACS

Keywords
PACS
  • 75.50.Pp
    Magnetic semiconductors
  • 75.50.Dd
    Nonmetallic ferromagnetic materials
  • 68.55.Jk
    Thin film structure and morphology; thickness; crystalline orientation and texture
  • 68.55.Ln
    Thin film defects and impurities including doping, implantation, distribution, concentration, etc
  • 61.72.Ss
    Impurity concentration, distribution, and gradients
  • 68.35.Fx
    Diffusion; interface formation (solid surfaces)
  • 66.30.Jt
    Diffusion of impurities in solids
  • 61.72.Ji
    Point defects and defect clusters including vacancies, interstitials, color centers, etc.
  • YEAR: 2005

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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