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Phase-change recording medium that enables ultrahigh-density electron-beam data storage

Appl. Phys. Lett. 86, 051902 (2005); doi:10.1063/1.1856690

Published 25 January 2005

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G. A. Gibson, A. Chaiken, K. Nauka, C. C. Yang, R. Davidson, and A. Holden
Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304

R. Bicknell, B. S Yeh, J. Chen, H. Liao, S. Subramanian, and D. Schut
Hewlett-Packard Imaging and Printing Group, 1000 NE Circle Boulevard, Corvallis, Oregon 97330

J. Jasinski and Z. Liliental-Weber
Lawrence Berkeley National Lab, MSD, 1 Cyclotron Road, Berkeley, California 94720
An ultrahigh-density electron-beam-based data storage medium is described that consists of a diode formed by growing an InSe/GaSe phase-change bilayer film epitaxially on silicon. Bits are recorded as amorphous regions in the InSe layer and are detected via the current induced in the diode by a scanned electron beam. This signal current is modulated by differences in the electrical properties of the amorphous and crystalline states. The success of this recording scheme results from the remarkable ability of layered III-VI materials, such as InSe, to maintain useful electrical properties at their surfaces after repeated cycles of amorphization and recrystallization. ©2005 American Institute of Physics
History: Received 27 September 2004; accepted 13 December 2004; published 25 January 2005
Permalink: http://link.aip.org/link/?APPLAB/86/051902/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.30.Kk
    Semiconductor junction diodes
  • 42.79.Vb
    Optical storage systems, optical disks
  • 61.82.Fk
    Radiation effects on semiconductors
  • 64.70.Kb
    Solid–solid transitions
  • 81.30.Hd
    Constant-composition solid–solid phase transformations: polymorphic, massive, and order–disorder
  • 61.80.Fe
    Electron and positron radiation effects
  • YEAR: 2005

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ISSN:
0003-6951 (print)   1077-3118 (online)
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