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Microcontact patterning of ruthenium gate electrodes by selective area atomic layer deposition

Appl. Phys. Lett. 86, 051903 (2005); doi:10.1063/1.1852079

Published 26 January 2005

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K. J. Park, J. M. Doub, T. Gougousi, and G. N. Parsons
Department of Chemical and Biomolecular Engineering, North Carolina State University, Raleigh, North Carolina 27695
Patterned octadecyltrichlorosilane monolayers are used to inhibit film nucleation, enabling selective area atomic layer deposition (ALD) of ruthenium on SiO2 and HfO2 surfaces using bis-(cyclopentadienyl)ruthenium and oxygen. X-ray photoelectron spectroscopy indicated that OTS could deactivate film growth on thermal silicon oxide and hafnium oxide surfaces. The growth rate of ALD Ru is similar on various starting surfaces, but the growth initiation differed substantially. Metal-oxide-semiconductor capacitors were fabricated directly using the selective-area process. Capacitance measurements indicate the effective work function of ALD Ru is 4.84±0.1  eV on SiO2, and the effective work function is reduced on HfO2/SiO2 layers. ©2005 American Institute of Physics
History: Received 21 July 2004; accepted 16 November 2004; published 26 January 2005
Permalink: http://link.aip.org/link/?APPLAB/86/051903/1
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KEYWORDS and PACS

Keywords
PACS
  • 84.32.Tt
    Capacitors
  • 68.55.Ac
    Thin film nucleation and growth: microscopic aspects
  • 73.40.Qv
    Electrical properties of metal–insulator–semiconductor structures including semiconductor-to-insulator
  • 81.15.Kk
    Vapor phase epitaxy; growth from vapor phase
  • 85.30.Tv
    Semiconductor field effect devices
  • 79.60.Bm
    Photoelectron spectra of clean metal, semiconductor, and insulator surfaces
  • 79.60.Jv
    Photoelectron spectra of interfaces; heterostructures; nanostructures
  • 79.60.Dp
    Photoelectron spectra of adsorbed layers and thin films
  • YEAR: 2005

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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