Efficient drift dominated photodiodes using defected materials
Lattice-mismatched crystal growth can result in a high density of defects, which usually degrades the performance of optoelectronic devices. We demonstrate a drift dominated photodiode, which has high...
Lattice-mismatched crystal growth can result in a high density of defects, which usually degrades the performance of optoelectronic devices. We demonstrate a drift dominated photodiode, which has high...
Second-order optical nonlinear and luminescent properties of Ba2TiSi2O8 nanocrystallized glass
The optical properties of Ba2TiSi2O8 nanocrystals in transparent crystallized glasses were investigated. The transparent nanocrystallized glass with Ba2TiSi2O8 crystals having a particle size of ~200&...
The optical properties of Ba2TiSi2O8 nanocrystals in transparent crystallized glasses were investigated. The transparent nanocrystallized glass with Ba2TiSi2O8 crystals having a particle size of ~200&...
High-performance type-II InAs/GaSb superlattice photodiodes with cutoff wavelength around 7 µm
Appl. Phys. Lett. 86, 091109 (2005); doi:10.1063/1.1879113
Published 25 February 2005
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We report the most recent result in the area of type-II InAs/GaSb superlattice photodiodes that have a cutoff wavelength around 7 µm at 77 K. Superlattice with a period of 40 Å lattice matched to GaSb was realized using GaxIn1–x type interface engineering technique. Compared with significantly longer period superlattices, we have reduced the dark current density under reverse bias dramatically. For a 3 µm thick structure, using sulfide-based passivation, the dark current density reached 2.6×10–5 A/cm2 at –3 V reverse bias at 77 K. At this temperature the photodiodes have R0A of 9300 
cm2 and a thermally limited zero bias detectivity of 1×1012 cm Hz1/2/W. The 90%–10% cutoff energy width was only 16.5 meV. The devices did not show significant dark current change at 77 K after three months storage in the atmosphere.
©2005 American Institute of Physics
cm2 and a thermally limited zero bias detectivity of 1×1012 cm Hz1/2/W. The 90%–10% cutoff energy width was only 16.5 meV. The devices did not show significant dark current change at 77 K after three months storage in the atmosphere.
©2005 American Institute of Physics
| History: | Received 5 November 2004; accepted 31 January 2005; published 25 February 2005 |
| Permalink: |
http://link.aip.org/link/?APPLAB/86/091109/1 |
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0003-6951 (print)
1077-3118 (online)
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