Applied Physics Letters
Feedback | Help | Exit
Applied Physics Letters
   
 
 
 
Previous Article
Efficient polymer-nanocrystal quantum-dot photodetectors
We have realized highly efficient photodetectors based on composites of the semiconducting polymer poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] and PbSe nanocrystal quantum dots. The exte...
Next Article
Adsorption-induced conversion of the carbon nanotube field effect transistor from ambipolar to unipolar behavior
We investigate ambipolar to unipolar transition by the effect of ambient air on the carbon nanotube field-effect transistor. A unipolar transport property of the double-walled nanotube field-effect tr...

Piezoresistance of carbon nanotubes on deformable thin-film membranes

Appl. Phys. Lett. 86, 093104 (2005); doi:10.1063/1.1872221

Published 23 February 2005

You are not logged in to this journal. Log in

Randal J. Grow, Qian Wang, Jien Cao, Dunwei Wang, and Hongjie Dai
Department of Chemistry, Stanford University, Stanford, California 94305
Carbon nanotubes have interesting electromechanical properties that may enable a new class of nanoscale mechanical sensors. We fabricated two-terminal nanotube devices on silicon nitride membranes, measured their electronic transport versus strain, and estimated their band gaps and the strain-induced changes in them. We found band-gap increases and decreases among both semiconducting and small-gap semiconducting (SGS) tubes. The SGS band gaps exceeded the predicted curvature-induced gaps for their diameter. Some of the band-gap changes for both types of tubes exceeded the predicted maxima. These anomalies are likely caused by interaction with the rough silicon nitride surface. ©2005 American Institute of Physics
History: Received 8 September 2004; accepted 10 January 2005; published 23 February 2005
Permalink: http://link.aip.org/link/?APPLAB/86/093104/1
BUY THIS ARTICLE   (US$28)
Download HTML Download Sectioned HTML Download PDF (235 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 73.50.Dn
    Low-field transport and mobility; piezoresistance (thin films)
  • 73.63.Fg
    Nanotubes (electronic transport)
  • 77.65.-j
    Piezoelectricity and electromechanical effects
  • YEAR: 2005

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (29)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. M.S. Dresselhaus, G. Dresselhaus, and P.C. Eklund, Science of Fullerenes and Carbon Nanotubes (Academic, San Diego, 1996).
  2. M.S. Dresselhaus, G. Dresselhaus, and P. Avouris, Carbon Nanotubes: Synthesis, Structure, Properties, and Applications (Springer, Berlin, 2001), Vol. 80.
  3. H. Dai, Surf. Sci. 500, 218 (2002).
  4. A. Maiti, Nat. Mater. 2, 440 (2003).
  5. C. L. Kane and E. J. Mele, Phys. Rev. Lett. 78, 1932 (1997).
  6. R. Heyd, A. Charlier, and E. McRae, Phys. Rev. B 55, 6820 (1997).
  7. L. Yang, M. P. Anantram, J. Han, and J. P. Lu, Phys. Rev. B 60, 13874 (1999).
  8. L. Yang and J. Han, Phys. Rev. Lett. 85, 154 (2000).
  9. A. Kleiner and S. Eggert, Phys. Rev. B 63, 073408 (2001).
  10. T. W. Tombler, C. W. Zhou, L. Alexseyev, J. Kong, H. J. Dai, L. Lei, C. S. Jayanthi, M. J. Tang, and S. Y. Wu, Nature (London) 405, 769 (2000).
  11. A. Maiti, A. Svizhenko, and M. P. Anantram, Phys. Rev. Lett. 88, 126805 (2002).
  12. J. Cao, Q. Wang, and H. J. Dai, Phys. Rev. Lett. 90, 157601 (2003).
  13. E. D. Minot, Y. Yaish, V. Sazonova, J. Y. Park, M. Brink, and P. L. McEuen, Phys. Rev. Lett. 90, 156401 (2003).
  14. W. P. Eaton and J. H. Smith, Smart Mater. Struct. 6, 530 (1997).
  15. J. Kong, H. T. Soh, A. M. Cassell, C. F. Quate, and H. J. Dai, Nature (London) 395, 878 (1998).
  16. H. T. Soh, C. F. Quate, A. F. Morpurgo, C. M. Marcus, J. Kong, and H. J. Dai, Appl. Phys. Lett. 75, 627 (1999).
  17. A. Javey, J. Guo, Q. Wang, M. Lundstrom, and H. J. Dai, Nature (London) 424, 654 (2003).
  18. D. Mann, A. Javey, J. Kong, Q. Wang, and H. J. Dai, Nano Lett. 3, 1541 (2003).
  19. C. W. Zhou, J. Kong, and H. J. Dai, Phys. Rev. Lett. 84, 5604 (2000).
  20. M. Ouyang, J. L. Huang, C. L. Cheung, and C. M. Lieber, Science 292, 702 (2001).
  21. S. J. Tans, A. R. M. Verschueren, and C. Dekker, Nature (London) 393, 49 (1998).
  22. J. W. Ding, X. H. Yan, and J. X. Cao, Phys. Rev. B 66, 073401 (2002).
  23. P. E. Lammert, P. H. Zhang, and V. H. Crespi, Phys. Rev. Lett. 84, 2453 (2000).
  24. T. Hertel, R. E. Walkup, and P. Avouris, Phys. Rev. B 58, 13870 (1998).
  25. A. Maiti and A. Ricca, Chem. Phys. Lett. 395, 7 (2004).
  26. Y.-K. Kwon and D. Tomanek, Phys. Rev. B 58, R16001 (1998).
  27. S. Reich, C. Thomsen, and P. Ordejon, Phys. Rev. B 65, 155411 (2002).
  28. G.T. A. Kovacs, Micromachined Transducers Sourcebook (McGraw-Hill, New York, 1998).
  29. C. L. Kane, E. J. Mele, R. S. Lee, J. E. Fischer, P. Petit, H. Dai, A. Thess, R. E. Smalley, A. R. M. Verschueren, S. J. Tans, and C. Dekker, Europhys. Lett. 41, 683 (1998).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics