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Ultrapure C60 field-effect transistors and the effects of oxygen exposure

Appl. Phys. Lett. 86, 112114 (2005); doi:10.1063/1.1883327

Published 11 March 2005

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A. Tapponnier, I. Biaggio, and P. Günter
Nonlinear Optics Laboratory, Institute of Quantum Electronics, Swiss Federal Institute of Technology ETH-Zürich, CH-8093 Zürich, Switzerland
We report on electrical measurements of C60-based field-effect transistors (FETs) that were fabricated and characterized in an ultrahigh vacuum, and on how their properties are affected by progressive exposure to impurity gases. The in situ experiments demonstrated that oxygen-free devices have unipolar n-type characteristics with an electron field-effect mobility of up to 0.08  cm2/V  s immediately after fabrication, and up to 0.5  cm2/V  s after an annealing treatment in a high vacuum. Upon oxygen exposure, the effective electron mobility dramatically decreases in a way that depends on the diffusion time of oxygen into the C60 thin film. It is shown that contact with oxygen can lead to C60-FETs with ambipolar characteristics. The real-time measurement of the degradation of the devices subjected to oxygen allows us to derive the diffusion rate for oxygen molecules in C60 thin films, yielding a diffusion constant D=4×10–12  cm2/s. ©2005 American Institute of Physics
History: Received 24 September 2004; accepted 25 January 2005; published 11 March 2005
Permalink: http://link.aip.org/link/?APPLAB/86/112114/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.30.Tv
    Semiconductor field effect devices
  • 85.65.+h
    Molecular electronic devices
  • 73.61.Wp
    Electrical properties of fullerenes and related materials (thin films)
  • 66.30.Jt
    Diffusion of impurities in solids
  • 81.40.Gh
    Other heat and thermomechanical treatments
  • 73.50.Dn
    Low-field transport and mobility; piezoresistance (thin films)
  • YEAR: 2005

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0003-6951 (print)   1077-3118 (online)
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