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Electrical spin pumping of quantum dots at room temperature

Appl. Phys. Lett. 86, 132503 (2005); doi:10.1063/1.1890469

Published 22 March 2005

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C. H. Li, G. Kioseoglou, O. M. J. van 't Erve, M. E. Ware, D. Gammon, R. M. Stroud, and B. T. Jonker
Naval Research Laboratory, Washington, DC 20375

R. Mallory, M. Yasar, and A. Petrou
State University of New York at Buffalo, Buffalo, New York 14260
We report on electrical control of the spin polarization of InAs/GaAs self-assembled quantum dots (QDs) at room temperature. This is achieved by electrical injection of spin-polarized electrons from an Fe Schottky contact. The circular polarization of the QD electroluminescence shows that a 5% electron spin polarization is obtained in the InAs QDs at 300  K, which is remarkably insensitive to temperature. This is attributed to suppression of the spin-relaxation mechanisms in the QDs due to reduced dimensionality. These results demonstrate that practical regimes of spin-based operation are clearly attainable in solid-state semiconductor devices. ©2005 American Institute of Physics
History: Received 17 November 2004; accepted 7 February 2005; published 22 March 2005
Permalink: http://link.aip.org/link/?APPLAB/86/132503/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.63.Kv
    Quantum dots (electronic transport)
  • 72.25.Dc
    Spin polarized transport in semiconductors
  • 78.60.Fi
    Electroluminescence (condensed matter)
  • 72.25.Mk
    Spin transport through interfaces
  • 72.25.Rb
    Spin relaxation and scattering (spin polarized transport)
  • 72.25.Hg
    Electrical injection of spin polarized carriers
  • 72.25.Pn
    Current-driven spin pumping
  • 78.67.Hc
    Optical properties of quantum dots
  • 73.30.+y
    Surface double layers, Schottky barriers, and work functions
  • YEAR: 2005

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (24)
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