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We present current–voltage studies of very thin (~77  nm) barium titanate single crystals up to 1.3  GV/m applied field. These show that the mechanism of leakage current at hi...

Structural, electronic, and dielectric properties of ultrathin zirconia films on silicon

Appl. Phys. Lett. 86, 152902 (2005); doi:10.1063/1.1864235

Published 4 April 2005

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S. Sayan, N. V. Nguyen, and J. Ehrstein
Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899

T. Emge and E. Garfunkel
Department of Chemistry, Rutgers University, Piscataway, New Jersey 08854

M. Croft, Xinyuan Zhao, and David Vanderbilt
Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854

I. Levin
Ceramics Department, National Institute of Standards and Technology, Gaithersburg, Maryland 20899

E. P. Gusev
IBM Thomas J. Watson Research Center, Semiconductor Research and Development Center (SRDC), Yorktown Heights, New York 10598

Hyoungsub Kim and P. J. McIntyre
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
As high-permittivity dielectrics approach use in metal-oxide-semiconductor field-effect transistor production, an atomic level understanding of their dielectric properties and the capacitance of structures made from them is being rigorously pursued. We and others have shown that crystal structure of ZrO2 films have considerable effects on permittivity as well as band gap. The as-deposited films reported here appear amorphous below a critical thickness (~5.4  nm) and transform to a predominantly tetragonal phase upon annealing. At much higher thickness the stable monoclinic phase will be favored. These phase changes may have a significant effect on channel mobility. ©2005 American Institute of Physics
History: Received 25 May 2004; accepted 17 December 2004; published 4 April 2005
Permalink: http://link.aip.org/link/?APPLAB/86/152902/1
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KEYWORDS and PACS

Keywords
PACS
  • 77.84.Bw
    Dielectric, piezoelectric, and ferroelectric elements, oxides, nitrides, borides, carbides, chalcogenides, etc.
  • 77.55.+f
    Dielectric thin films
  • 68.55.Jk
    Thin film structure and morphology; thickness; crystalline orientation and texture
  • 77.22.Ch
    Permittivity (dielectric function)
  • 73.50.Dn
    Low-field transport and mobility; piezoresistance (thin films)
  • 78.20.Ci
    Optical constants including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity
  • 81.40.Gh
    Other heat and thermomechanical treatments
  • YEAR: 2005

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (22)
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