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Depletion characteristics of two-dimensional lateral p-n-junctions
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Free and bound excitons in GaN/AlGaN homoepitaxial quantum wells grown on bulk GaN substrate along the nonpolar (11[overline 2]0) direction
Nonpolar multiple quantum wells (MQWs) have been grown by plasma assisted molecular beam epitaxy on bulk GaN crystals oriented along the (110) direction. The photoluminescence intensity of the nonpola...

Charging efficiency and lifetime of image-bound electrons on a dielectric surface

Appl. Phys. Lett. 86, 162111 (2005); doi:10.1063/1.1906314

Published 14 April 2005

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M. Biasini
Department of Physics, University of California-Riverside, Riverside, California 92521 and ENEA, Via Don Fiammelli 2, 40129 Bologna, Italy

R. D. Gann, J. A. Yarmoff, and A. P. Mills
Department of Physics, University of California-Riverside, Riverside, California 92521

L. N. Pfeiffer and K. W. West
Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974

X. P. A. Gao
Los Alamos National Laboratory, Los Alamos, New Mexico 87545

B. C. D. Williams
Department of Physics, University of California-Riverside, Riverside, California 92521
The surface charge generated on an Al0.24Ga0.76As/GaAs quantum well sample by electron bombardment was monitored by measuring the change in the conductivity of the channel. Upon turning off the electron bombardment the surface charge on adsorbed layers of xenon and water at 8  K decays in room temperature darkness with a lifetime tau=0.30±0.02  s. The average charging efficiency, µ0, defined as the ratio of the charge collected by the surface to the beam current times the charging time, is µ0~=0.001. Surface charging proves to be an effective method for contactless gating of field effect devices. ©2005 American Institute of Physics
History: Received 15 February 2005; accepted 21 March 2005; published 14 April 2005
Permalink: http://link.aip.org/link/?APPLAB/86/162111/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.63.Hs
    Quantum wells (electronic transport)
  • 73.21.Fg
    Quantum wells (electron states/collective excitations)
  • 68.43.-h
    Chemisorption/physisorption: adsorbates on surfaces
  • 73.40.-c
    Electronic transport in interface structures
  • YEAR: 2005

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (17)
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