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Room-temperature spin coherence in ZnO

Appl. Phys. Lett. 86, 232507 (2005); doi:10.1063/1.1946204

Published 3 June 2005

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S. Ghosh, V. Sih, W. H. Lau, and D. D. Awschalom
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106

S.-Y. Bae and S. Wang
Department of Materials Science and Engineering, Stanford University, Stanford, California 94305

S. Vaidya and G. Chapline
Lawrence Livermore National Laboratory, Livermore, California 94550
Time-resolved optical techniques are used to explore electron spin dynamics in bulk and epilayer samples of n-type ZnO as a function of temperature and magnetic field. The bulk sample yields a spin coherence time T2* of 20 ns at T=30  K. Epilayer samples, grown by pulsed laser deposition, show a maximum T2* of 2 ns at T=10  K, with spin precession persisting up to T=280  K. ©2005 American Institute of Physics
History: Received 23 February 2005; accepted 2 May 2005; published 3 June 2005
Permalink: http://link.aip.org/link/?APPLAB/86/232507/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.05.Dz
    II–VI semiconductors: fabrication, treatment, testing and analysis
  • 78.66.Hf
    Optical properties of II–VI semiconductors (thin films)
  • 78.47.+p
    Time-resolved optical spectroscopies and other ultrafast optical measurements in condensed matter
  • 73.61.Ga
    Electrical properties of II–VI semiconductors (thin films)
  • YEAR: 2005

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ISSN:
0003-6951 (print)   1077-3118 (online)
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