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Uncooled operation of type-II InAs/GaSb superlattice photodiodes in the midwavelength infrared range

Appl. Phys. Lett. 86, 233106 (2005); doi:10.1063/1.1947908

Published 3 June 2005

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Yajun Wei, Andrew Hood, Haiping Yau, Aaron Gin, and Manijeh Razeghi
Center for Quantum Devices, Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208

Meimei Z. Tidrow
Missile Defense Agency, 7100 Defense Pentagon, Washington, D.C. 20301

Vaidya Nathan
Air Force Research Laboratory/VSSS, Kirtland Air Force Base, New Mexico 87117
We report high performance uncooled midwavelength infrared photodiodes based on interface-engineered InAs/GaSb superlattice. Two distinct superlattices were designed with a cutoff wavelength around 5  µm for room temperature and 77 K. The device quantum efficiency reached more than 25% with responsivity around 1  A/W. Detectivity was measured around 109  cm  Hz1/2/W at room temperature and 1.5×1013  cm  Hz1/2/W at 77 K under zero bias. The devices were without antireflective coating. The device quantum efficiency stays at nearly the same level within this temperature range. Additionally, Wannier–Stark oscillations in the Zener tunneling current were observed up to room temperature. ©2005 American Institute of Physics
History: Received 22 February 2005; accepted 9 May 2005; published 3 June 2005
Permalink: http://link.aip.org/link/?APPLAB/86/233106/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.60.Dw
    Photodiodes; phototransistors; photoresistors
  • 85.30.Mn
    Semiconductor junction breakdown and tunneling devices including resonance tunneling devices
  • 85.60.Gz
    Photodetectors including infrared and CCD detectors
  • YEAR: 2005

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (13)
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