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Template-directed carbon nanotube network using self-organized Si nanocrystals

Appl. Phys. Lett. 86, 263107 (2005); doi:10.1063/1.1952585

Published 22 June 2005

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We demonstrate a way to direct carbon nanotube growth using Si nanocrystals that are self-ordered via the thermal decomposition of thin silicon-on-insulator substrates. The Si nanocrystals are about 90  nm wide and 100–150  nm tall, with 200  nm spacing. Nanotubes connect the silicon nanocrystals to form a network. Nanotubes selectively appear between tops of the Si nanocrystals. We show that the flow pattern of the carbon feedstock in the chemical vapor deposition growth process is disturbed by the geometric effect of the Si nanocrystals, providing a mechanism for growth between the tops of the Si nanocrystals. ©2005 American Institute of Physics
History: Received 6 May 2005; accepted 17 May 2005; published 22 June 2005
Permalink: http://link.aip.org/link/?APPLAB/86/263107/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.07.De
    Nanotubes: fabrication and characterization
  • 81.16.Dn
    Self-assembly in nanofabrication and processing
  • 81.16.Be
    Chemical synthesis methods in nanofabrication and processing
  • 81.15.Gh
    Chemical vapor deposition including plasma-enhanced CVD, MOCVD, etc
  • 82.30.Lp
    Decomposition chemical reactions (pyrolysis, dissociation, and fragmentation)
  • YEAR: 2005

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (24)
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