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Enhanced thermoelectric performance in PbTe-based superlattice structures from reduction of lattice thermal conductivity

Appl. Phys. Lett. 87, 023105 (2005); doi:10.1063/1.1992662

Published 8 July 2005

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J. C. Caylor, K. Coonley, J. Stuart, T. Colpitts, and R. Venkatasubramanian
Center for Thermoelectric Research, RTI International, Research Triangle Park, North Carolina 27709
We have fabricated two-dimensional n-type PbTe/PbTe0.75Se0.25 structures using an evaporation process. In optimized films exhibiting a high-quality superlattice structure, a significant reduction in lattice thermal conductivity has been experimentally measured. The reduction would indicate enhanced thermoelectric device performance compared to standard PbTeSe alloys given that the electrical components, specifically, the Seebeck coefficient and electrical resistivity, were not observed to deteriorate from bulk values. The analysis of these films shows continuous layers with a true two-dimensional superlattice structure, as opposed to the PbTe/PbSe system that exhibits zero-dimensional structures from self-assembly. The room-temperature measurement of cross-plane figure-of-merit in a n-type PbTe/PbTe0.75Se0.25 device structure by the transient method has been combined with temperature-dependent measurements of in-plane resistivity and Seebeck coefficient to yield evidence of enhanced thermoelectric performance. The similarities and differences between the superlattice in the PbTe/PbTe0.75Se0.25 system and the Bi2Te3/Sb2Te3 material system are presented. ©2005 American Institute of Physics
History: Received 22 February 2005; accepted 31 May 2005; published 8 July 2005
Permalink: http://link.aip.org/link/?APPLAB/87/023105/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.07.-b
    Nanoscale materials and structures: fabrication and characterization
  • 81.05.Hd
    Other semiconductors: fabrication, treatment, testing and analysis excluding elemental, II–VI, III–V and amorphous semiconductors
  • 73.50.Lw
    Thermoelectric effects in thin films
  • 72.20.Pa
    Thermoelectric and thermomagnetic effects (semiconductors/insulators)
  • 73.61.Le
    Electrical properties of other inorganic semiconductors (thin films) excluding elemental, II–VI, III–V and amorphous semiconductors
  • 66.70.+f
    Nonelectronic thermal conduction and heat-pulse propagation in solids including thermal waves
  • 68.55.Ac
    Thin film nucleation and growth: microscopic aspects
  • 81.15.Ef
    Vacuum deposition
  • YEAR: 2005

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (13)

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  1. R. Venkatasubramanian, E. Siivola, T. Colpitts, and B. O'Quinn, Nature (London) 413, 597 (2001).
  2. T. C. Harman, P. J. Taylor, M. P. Walsh, and B. E. LaForge, Science 297, 2229 (2002).
  3. K. F. Hsu, S. Loo, F. Guo, W. Chen, J. S. Dyck, C. Uher, T. Hogan, E. K. Polychroniadis, and M. G. Kanatzidis, Science 303, 818 (2004).
  4. Thermoelectric Materials 2003—Research & Applications, Proc. of MRS, edited by G. S. Nolas, J. Yang, T. P. Hogan, and D. C. Johnson (Materials Research Society, Pittsburgh, 2003), Vol. 793.
  5. R. Venkatasubramanian, Phys. Rev. B 61, 3091 (2000).
  6. G. C. Chen, C. L. Tien, X. Wu, and J. S. Smith, Heat Transfer Eng. 116, 325 (1994).
  7. S. M. Lee, D. G. Cahill, and R. Venkatasubramanian, Appl. Phys. Lett. 70, 2957 (1997).
  8. L. J. van der Pauw, Philips Res. Rep. 13, 1 (1958).
  9. M. Pinczolits, G. Springholz, and G. Bauer, Appl. Phys. Lett. 73, 250 (1998).
  10. A. G. Fedorov, I. A. Shneiderman, A. Yu. Sipatov, and E. V. Kaidalova, J. Cryst. Growth 198/199, 1211 (1999).
  11. R. Venkatasubramanian, T. Colpitts, B. O'Quinn, S. Liu, N. El-Masry, and M. Lamvik, Appl. Phys. Lett. 75, 1104 (1999).
  12. H. Beyer, J. Nurnus, H. Bottner, A. Lambrecht, T. Roch, and G. Bauer, Appl. Phys. Lett. 80, 1216 (2002).
  13. T.C. Harman, P.J. Taylor, D.L. Spears, and M.P. Walsh, 18th International Conference on Thermoelectrics, Proceedings ICT'99, Baltimore, MD, 29 August–2 September 1999, p. 280.

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