Gigantic enhancement of magnetochiral effect in photonic crystals
We theoretically propose a method to enhance dramatically a magnetochiral (MC) effect by using the photonic crystals composed of a multiferroic material. The MC effect, the directional birefringence e...
We theoretically propose a method to enhance dramatically a magnetochiral (MC) effect by using the photonic crystals composed of a multiferroic material. The MC effect, the directional birefringence e...
Increases in the irreversibility field and the upper critical field of bulk MgB2 by ZrB2 addition
In a study of the influence of ZrB2 additions on the irreversibility field, µ0Hirr and the upper critical field Bc2, bulk samples with 7.5 at % ZrB2 additions were made by ...
In a study of the influence of ZrB2 additions on the irreversibility field, µ0Hirr and the upper critical field Bc2, bulk samples with 7.5 at % ZrB2 additions were made by ...
Ballistic bit addressing in a magnetic memory cell array
Appl. Phys. Lett. 87, 042504 (2005); doi:10.1063/1.1999860
Published 19 July 2005
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A ringing free bit addressing scheme for magnetic memories like magnetic random access memory (MRAM) is proposed. As in standard MRAM addressing schemes the switching of a selected cell is obtained by the combination of two half-select field pulses. Numerical solutions of a single spin model of an MRAM cell show that the pulse parameters can be chosen such that the application of the half select pulse induces a full precessional turn of the magnetization (no switch) whereas the superposition of two half select pulses induces a half precessional turn (switch). With well adapted pulse parameters both full-select and half-select switching occurs on ballistic trajectories characterized by the absence of ringing after magnetic pulse decay. Such ballistic bit addressing allows ultrahigh MRAM clock rates.
©2005 American Institute of Physics
| History: | Received 17 January 2005; accepted 21 June 2005; published 19 July 2005 |
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http://link.aip.org/link/?APPLAB/87/042504/1 |
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REFERENCES (13)
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- In principle also higher order switching and nonswitching (4) could be considered, e.g., TPrec(HHS)=3/2·TPrec(2·HHS).
