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Bias-controlled hole degeneracy and implications for quantifying spin polarization

Appl. Phys. Lett. 87, 122503 (2005); doi:10.1063/1.2051790

Published 13 September 2005

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G. Kioseoglou, A. T. Hanbicki, and B. T. Jonker
Naval Research Laboratory, Washington, DC 20375

A. Petrou
State University of New York at Buffalo, Buffalo, New York 14260
We report on a spin injection study from an Fe Schottky tunnel contact into n-AlGaAs/GaAs/p-AlGaAs light-emitting diodes with a bulk-like GaAs recombination region. The spectral composition and circular polarization of the electroluminescence allowed us to monitor changes in the band structure induced by the applied bias voltage. At low bias conditions, the holes are confined at the GaAs/p-AlGaAs interface and have two-dimensional (2D) character with nondegenerate heavy- and light-hole subbands. Increasing the bias voltage moves the structure towards a flatband condition, making the holes three-dimensional (3D)-like. The results are discussed in terms of the quantum selection rules describing radiative recombination in 2D and 3D systems. ©2005 American Institute of Physics
History: Received 7 February 2005; accepted 28 July 2005; published 13 September 2005
Permalink: http://link.aip.org/link/?APPLAB/87/122503/1
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KEYWORDS and PACS

Keywords
PACS
  • 72.25.Dc
    Spin polarized transport in semiconductors
  • 73.20.At
    Surface states, band structure, electron density of states
  • 73.30.+y
    Surface double layers, Schottky barriers, and work functions
  • 78.60.Fi
    Electroluminescence (condensed matter)
  • YEAR: 2005

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (18)
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  1. G. A. Prinz, Science 282, 1660 (1998).
  2. S. W. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnar, M. L. Roukes, A. Y. Chtchelkanova, and D. M. Treger, Science 294, 1488 (2001).
  3. B. T. Jonker, Proc. IEEE 91, 727 (2003).
  4. R. Fiederling, M. Keim, G. Reuscher, W. Ossau, G. Schmidt, A. Waag, and L. W. Molenkamp, Nature (London) 401, 787 (1999).
  5. B. T. Jonker, Y. D. Park, B. R. Bennett, H. D. Cheong, G. Kioseoglou, and A. Petrou, Phys. Rev. B 62, 8180 (2000).
  6. D. K. Young, E. Johnston-Halperin, D. D. Awschalom, Y. Ohno, and H. Ohno, Appl. Phys. Lett. 80, 1598 (2002).
  7. M. Kohda, Y. Ohno, K. Takamura, F. Matsukura, and H. Ohno, Jpn. J. Appl. Phys., Part 2 40, L1274 (2001).
  8. G. Kioseoglou, A. T. Hanbicki, J. M. Sullivan, O. M. J. van 't Erve, C. H. Li, S. C. Erwin, R. Mallory, M. Yasar, A. Petrou, and B. T. Jonker, Nat. Mater. 3, 799 (2004).
  9. H. J. Zhu, M. Ramsteiner, H. Kostial, M. Wassermeier, H.-P. Schönherr, and K. H. Ploog, Phys. Rev. Lett. 87, 016601 (2001).
  10. A. T. Hanbicki, B. T. Jonker, G. Itskos, G. Kioseoglou, and A. Petrou, Appl. Phys. Lett. 80, 1240 (2002).
  11. A. T. Hanbicki, O. M. J. van 't Erve, R. Magno, G. Kioseoglou, C. H. Li, B. T. Jonker, G. Itskos, R. Mallory, M. Yasar, and A. Petrou, Appl. Phys. Lett. 82, 4092 (2003).
  12. V. F. Motsnyi, P. Van Dorpe, W. Van Roy, E. Goovaerts, V. I. Safarov, G. Borghs, and J. De Boeck, Phys. Rev. B 68, 245319 (2003).
  13. F. Meier and B.P. Zakharchenya, Optical Orientation (North-Holland, Amsterdam, 1984), Vol. 8.
  14. B. T. Jonker, A. T. Hanbicki, Y. D. Park, G. Itskos, M. Furis, G. Kioseoglou, and A. Petrou, Appl. Phys. Lett. 79, 3098 (2001).
  15. Y. R. Yuan, K. Mohammed, M. A. A. Pudensi, and J. L. Merz, Appl. Phys. Lett. 45, 739 (1984).
  16. W. Ossau, E. Bangert, and G. Welmann, Solid State Commun. 64, 711 (1987).
  17. Z. G. Yu and M. E. Flatte, Phys. Rev. B 66, 235302 (2002).
  18. G. Schmidt and L. W. Molenkamp, Semicond. Sci. Technol. 19, 1161 (2004).

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