Exposition of semiconducting and ferromagnetic properties of pulsed-laser-deposited thin films of LaFe1–xNixO3 (x=0.3, 0.4, and 0.5)
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Si-doped AlxGa1–xN(0.56
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Relation between carrier mobility and cell performance in bulk heterojunction solar cells consisting of soluble polythiophene and fullerene derivatives
Appl. Phys. Lett. 87, 132105 (2005); doi:10.1063/1.2058210
Published 21 September 2005
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The effect of carrier mobility on the cell performance was examined in the bulk heterojunction solar cells consisting of soluble polythiophene (PHTh) and fullerene derivatives (PCBM). The hole mobility decreased from 6.3×10–3 cm2 V–1 s–1 in the pure PHTh by blending PCBM, while the electron mobility decreased from 2.4×10–2 cm2 V–1 s–1 in the pure PCBM by blending the PHTh. When blending ratio R=PHTh/(PHTh+PCBM) by weight was 0.5–0.85, ambipolar carrier conduction was possible, showing the best-balanced ambipolar carrier mobility of ca. 10–4 cm2 V–1 s–1 at R=0.7. The power conversion efficiency (
) of the PHTh:PCBM bulk heterojunction solar cells under AM1.5, 85 mW cm–2 illumination significantly depended on the blending ratio R and the maximum of 2.6% was observed at R=0.7, where both electrons and holes are conducting well. Thus, it was concluded that the ambipolar carrier conduction limits the performance of PHTh:PCBM bulk heterojunction solar cells.
©2005 American Institute of Physics
) of the PHTh:PCBM bulk heterojunction solar cells under AM1.5, 85 mW cm–2 illumination significantly depended on the blending ratio R and the maximum of 2.6% was observed at R=0.7, where both electrons and holes are conducting well. Thus, it was concluded that the ambipolar carrier conduction limits the performance of PHTh:PCBM bulk heterojunction solar cells.
©2005 American Institute of Physics
| History: | Received 27 May 2005; accepted 16 August 2005; published 21 September 2005 |
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