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Avalanche multiplication in AlGaN based solar-blind photodetectors

Appl. Phys. Lett. 87, 241123 (2005); doi:10.1063/1.2140610

Published 9 December 2005

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R. McClintock, A. Yasan, K. Minder, P. Kung, and M. Razeghi
Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208
Avalanche multiplication has been observed in solar-blind AlGaN-based p-i-n photodiodes. Upon ultraviolet illumination, the optical gain shows a soft breakdown starting at relatively low electric fields, eventually saturating without showing a Geiger mode breakdown. The devices achieve a maximum optical gain of 700 at a reverse bias of 60 V. By modeling the device, it is found that this corresponds to an electric-field strength of 1.7  MV/cm. ©2005 American Institute of Physics
History: Received 23 September 2005; accepted 18 October 2005; published 9 December 2005
Permalink: http://link.aip.org/link/?APPLAB/87/241123/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.60.Gz
    Photodetectors including infrared and CCD detectors
  • 85.60.Dw
    Photodiodes; phototransistors; photoresistors
  • 61.82.Fk
    Radiation effects on semiconductors
  • YEAR: 2005

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ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (20)
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