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Are fluorinated boron nitride nanotubes n-type semiconductors?

Appl. Phys. Lett. 87, 243113 (2005); doi:10.1063/1.2142290

Published 8 December 2005

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H. J. Xiang, Jinlong Yang, J. G. Hou, and Qingshi Zhu
Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China and USTC Shanghai Institute for Advanced Studies, University of Science and Technology of China, Shanghai 201315, People's Republic of China
The structural and electronic properties of fluorine (F)-doped boron nitride nanotubes (BNNTs) are studied using density functional methods. Our results indicate that F atoms prefer to substitute N atoms, resulting in substantial changes of BN layers. However, F substitutional doping results in no shallow impurity states. The adsorption of F atoms on B sites is more stable than that on N sites. BNNTs with adsorbed F atoms are p-type semiconductors, suggesting the electronic conduction in F-doped multiwalled BNNTs with large conductivity observed experimentally might be of p-type due to the adsorbed F atoms, but not n-type as supposed before. ©2005 American Institute of Physics
History: Received 12 September 2005; accepted 25 October 2005; published 8 December 2005
Permalink: http://link.aip.org/link/?APPLAB/87/243113/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.63.Fg
    Nanotubes (electronic transport)
  • 71.20.Nr
    Electronic structure of crystalline semiconductor compounds
  • 71.15.Mb
    Density functional theory, local density approximation, gradient and other corrections (condensed matter electronic structure)
  • 61.72.Vv
    Doping and impurity implantation in III–V and II–VI semiconductors
  • 72.20.-i
    Electrical conductivity phenomena in semiconductors and insulators
  • 68.43.Mn
    Adsorption/desorption kinetics
  • YEAR: 2005

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (11)
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  1. A. Rubio, J. L. Corkill, and M. L. Cohen, Phys. Rev. B 49, R5081 (1994).
  2. N. G. Chopra, R. J. Luyken, K. Cherrey, V. H. Crespi, M. L. Cohen, S. G. Louie, and A. Zettl, Science 28, 335 (1994);
    3. A. Loiseau, F. Willaime, N. Demoncy, G. Hug, and H. Pascard, Phys. Rev. Lett. 76, 4737 (1996).
  3. X. J. Wu, J. L. Yang, J. G. Hou, and Q. S. Zhu, Phys. Rev. B 69, 153411 (2004).
  4. K. Suenaga, C. Colliex, N. Demoncy, A. Loiseau, H. Pascard, and F. Willaime, Science 278, 653 (1997);
    5. W. Mickelson, S. Aloni, W. Q. Han, J. Cumings, and A. Zettl, ibid. 300, 467 (2003).
  5. C. Tang, Y. Bando, Y. Huang, S. Yue, C. Gu, F. Xu, and D. Golberg, J. Am. Chem. Soc. 127, 6552 (2005).
  6. S. Limpijumnong, S. B. Zhang, S. H. Wei, and C. H. Park, Phys. Rev. Lett. 92, 155504 (2004).
  7. D. M. Ceperley and B. J. Alder, Phys. Rev. B 45, 566 (1980);
    8. J. P. Perdew and A. Zunger, Phys. Rev. B 23, 5048 (1981).
  8. G. Kresse and J. Hafner, Phys. Rev. B 47, 558 (1993).
  9. D. Vanderbilt, Phys. Rev. B 41, 7892 (1990).
  10. X. J. Wu, J. L. Yang, J. G. Hou, and Q. S. Zhu, J. Chem. Phys. 121, 8481 (2004).
  11. G. Mills, H. Jonsson, and G. K. Schenter, Surf. Sci., 324, 305 (1995).

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