Conductance quantization and the 0.7×2e2/h conductance anomaly in one-dimensional hole systems
Appl. Phys. Lett. 88, 012107 (2006); doi:10.1063/1.2161814
Published 5 January 2006
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We have studied ballistic transport in a one-dimensional (1D) channel formed using surface gate techniques on a back-gated, high-mobility, bilayer two-dimensional hole system. At millikelvin temperatures, robust conductance quantization is observed in the quantum wire formed in the top layer of the bilayer system, without the gate instabilities that have hampered previous studies of 1D hole systems. Using source drain bias spectroscopy, we have measured the 1D subband spacings, which are 510 times smaller than in comparable GaAs electron systems, but 23 times larger than in previous studies of 1D holes. We also report the first observation of the anomalous conductance plateau at G=0.7×2e2/h in a 1D hole system.
©2006 American Institute of Physics
| History: | Received 8 July 2005; accepted 2 December 2005; published 5 January 2006 |
| Permalink: |
http://link.aip.org/link/?APPLAB/88/012107/1 |
KEYWORDS and PACS
gallium arsenide,
III-V semiconductors,
electron gas,
two-dimensional hole gas,
semiconductor quantum wires,
one-dimensional conductivity,
ballistic transport,
hole mobility,
quantisation (quantum theory),
band structure
- 73.21.Hb
Quantum wires (electron states/collective excitations) - 73.63.Nm
Quantum wires (electronic transport) - 81.07.Vb
Quantum wires: fabrication and characterization - 72.15.Nj
Collective modes (e.g., in one-dimensional conductors) including synthetic metals - 73.23.Ad
Ballistic transport (mesoscopic systems) - 73.20.At
Surface states, band structure, electron density of states - YEAR: 2006
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
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