Epitaxial Bi/GaAs(111) diodes via electrodeposition
Bismuth films formed by electrodeposition on n-GaAs (111) at 70 °C are found to be single crystalline, (0001) oriented, with trigonal surface morphologies typical of high quality single...
Bismuth films formed by electrodeposition on n-GaAs (111) at 70 °C are found to be single crystalline, (0001) oriented, with trigonal surface morphologies typical of high quality single...
Surface passivation properties of boron-doped plasma-enhanced chemical vapor deposited hydrogenated amorphous silicon films on p-type crystalline Si substrates
Heterostructures, such as the crystalline silicon (c-Si)/plasma-enhanced chemical vapor deposited (PECVD) hydrogenated amorphous silicon (a-Si:H) structure, form a possibility in the development of a ...
Heterostructures, such as the crystalline silicon (c-Si)/plasma-enhanced chemical vapor deposited (PECVD) hydrogenated amorphous silicon (a-Si:H) structure, form a possibility in the development of a ...
Optical study of hot electron transport in GaN: Signatures of the hot-phonon effect
Appl. Phys. Lett. 88, 022103 (2006); doi:10.1063/1.2163709
Published 9 January 2006
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The hot-phonon lifetime in GaN is measured by temperature- and electric field-dependent photoluminescence studies of a n-type channel. The rate of increase of electron temperature with the external electric field provides a signature of nonquilibrium hot-phonon accumulation. Hot-electron temperatures are measured directly as a function of applied electric fields, and by comparing theoretical models for electron energy-loss into acoustic and optical phonons, a hot-phonon lifetime of 
ph=3 to 4 ps is extracted.
©2006 American Institute of Physics
ph=3 to 4 ps is extracted.
©2006 American Institute of Physics
| History: | Received 21 September 2005; revised 12 December 2005; accepted 13 December 2005; published 9 January 2006 |
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http://link.aip.org/link/?APPLAB/88/022103/1 |
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