Applied Physics Letters
Feedback | Help | Exit
Applied Physics Letters
Search:
   
 
 
 
Previous Article
Density determination of focused-electron-beam-induced deposits with simple cantilever-based method
Freestanding deposits are grown on a silicon cantilever from a precursor gas by an electron induced process. Deposit mass determination is performed with an atomic force microscopy setup, where the ca...
Next Article
Metamaterial with randomized patterns for negative refraction of electromagnetic waves
Artificial metamaterials made to date are all periodic in structure. Here we show that by randomizing contour patterns deposited lithographically on circuit board materials, a metamaterial characteriz...

Modeling of band gap properties of GaInNP alloys lattice matched to GaAs

Appl. Phys. Lett. 88, 031907 (2006); doi:10.1063/1.2164433

Published 18 January 2006

You are not logged in to this journal. Log in

I. A. Buyanova, M. Izadifard, and W. M. Chen
Department of Physics and Measurement Technology, Linköping University, S-58183 Linköping, Sweden

Y. G. Hong and C. W. Tu
Department of Electrical and Computer Engineering, University of California, La Jolla, California 92093
Compositional and temperature dependences of the band gap energies of GaInNP alloys, which are lattice matched to GaAs, are determined and modeled by a band anticrossing (BAC) interaction between the localized state of the isolated NP and extended host states. The BAC parameters are deduced as EN=2.1±0.1  eV and CMN=1.7±0.2  eV. The low value of the coupling parameter CMN implies weaker coupling of the N level with the host matrix, presumably due to short range ordering effects, similar to the case of GaInNAs alloys with a high In content. The obtained information is important for future modeling of the electronic structure of the alloys. ©2006 American Institute of Physics
History: Received 4 October 2005; accepted 19 November 2005; published 18 January 2006
Permalink: http://link.aip.org/link/?APPLAB/88/031907/1
BUY THIS ARTICLE   (US$24)
Download HTML Download Sectioned HTML Download PDF (75 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 71.20.Nr
    Electronic structure of crystalline semiconductor compounds
  • YEAR: 2006

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (18)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. For a recent review see, e.g., I. A. Buyanova, W. M. Chen, and B. Monemar, MRS Internet J. Nitride Semicond. Res. 6, 2 (2001).
  2. Physics and Applications of Dilute Nitrides, edited by I. A. Buyanova and W. M. Chen (Taylor & Francis, New York, 2004).
  3. R. J. Welty, Y. G. Hong, H. P. Xin, K. Mochizuki, C. W. Tu, and P. M. Asbeck, Proceedings of the 2000 IEEE/Cornell Conference on High Performance Devices (IEEE, Piscataway, NJ, 2000), pp. 33–40.
  4. Y. G. Hong, A. Nishikawa, and C. W. Tu, Appl. Phys. Lett. 83, 5446 (2003).
  5. W. Shan, W. Walukiewicz, J. W. Ager III, E. E. Haller, J. F. Geisz, D. J. Griedman, J. M. Olson, and S. R. Kurtz, Phys. Rev. Lett. 82, 1222 (1999).
  6. P. J. Klar, H. Gruning, W. Heimbrodt, J. Koch, F. Höhnsdorf, W. Stolz, P. M. A. Vicente, and J. Camassel, Appl. Phys. Lett. 76, 3439 (2000).
  7. I. Suemune, K. Uesugi, and W. Walukiewicz, Appl. Phys. Lett. 77, 3021 (2000).
  8. A. Polimeni, M. Capizzi, M. Geddo, M. Fischer, M. Reinhardt, and A. Forchel, Phys. Rev. B 63, 195320 (2001).
  9. W. Shan, W. Walukiewicz, K. M. Yu, J. Wu, J. W. Ager III, E. E. Haller, H. P. Xin, and C. W. Tu, Appl. Phys. Lett. 76, 3251 (2000).
  10. I. A. Buyanova, M. Izadifard, A. Kasic, H. Arwin, W. M. Chen, H. P. Xin, Y. G. Hong, and C. W. Tu, Phys. Rev. B 70, 085209 (2004).
  11. W. Walukiewicz, W. Shan, J. Wu, and K. M. Yu, in Physics and Applications of Dilute Nitrides, edited by I. A. Buyanova and W. M. Chen (Taylor & Francis, New York, 2004), pp. 23–64.
  12. Y. K. Su, C. H. Wu, S. H. Hsu, S. J. Chang, W. C. Chen, Y. S. Huang, and H. P. Hsu, Appl. Phys. Lett. 84, 1299 (2004)
  13. Y. K. Su, C. H. Wu, Y. S. Huang, H. P. Hsu, W. C. Chen, S. H. Hsu, and S. J. Chang, J. Cryst. Growth 264, 357 (2004).
  14. I. A. Buyanova, W. M. Chen, G. Pozina, J. P. Bergman, B. Monemar, H. P. Xin, and C. W. Tu, Appl. Phys. Lett. 75, 501 (1999).
  15. Y. P. Varshni, Physica (Amsterdam) 34, 149 (1967).
  16. H. M. Macksey, N. Holonyak, Jr., R. D. Dupuis, J. C. Campbell, and G. W. Zack, J. Appl. Phys. 44, 1333 (1973).
  17. K. Kim and A. Zunger, Phys. Rev. Lett. 86, 2609 (2001).
  18. P. Merle, D. Auvergne, H. Mathieu, and J. Chevallier. Phys. Rev. B 15, 2032 (1977).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics