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Resonant Raman scattering from CdS nanowires

Appl. Phys. Lett. 88, 043118 (2006); doi:10.1063/1.2168507

Published 27 January 2006

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A. Abdi, L. V. Titova, L. M. Smith, and H. E. Jackson
Department of Physics, University of Cincinnati, Ohio 45221-0011

J. M. Yarrison-Rice
Department of Physics, Miami University, Oxford, Ohio 45056

J. L. Lensch and L. J. Lauhon
Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208
Resonant Raman scattering (RRS) was used to probe the electronic states of CdS nanowires (~10  nm diameter) grown by chemical vapor deposition. Individual Ar+ laser lines were used to vary the excitation energy while observing scattering from CdS phonons; strong 1-longitudinal optical (LO) and 2-LO Raman resonances were readily observed within the broader photoluminescence emission. The energy separation between the peaks of the 1-LO and 2-LO resonance was found to be 34 meV, in good agreement with bulk values. These results demonstrate that RRS is a powerful tool for probing the electronic and vibrational properties of semiconductor nanowires. ©2006 American Institute of Physics
History: Received 19 August 2005; accepted 1 December 2005; published 27 January 2006
Permalink: http://link.aip.org/link/?APPLAB/88/043118/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.05.Dz
    II–VI semiconductors: fabrication, treatment, testing and analysis
  • 81.07.-b
    Nanoscale materials and structures: fabrication and characterization
  • 78.30.Fs
    Infrared and Raman spectra in III–V and II–VI semiconductors
  • 78.55.Et
    Photoluminescence in II–VI semiconductors
  • 63.22.+m
    Phonons or vibrational states in low-dimensional structures and nanoscale materials
  • 61.46.-w
    Nanoscale materials
  • YEAR: 2006

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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