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Supercritical-carbon dioxide-assisted cyclic deposition of metal oxide and metal thin films

Appl. Phys. Lett. 88, 092904 (2006); doi:10.1063/1.2181651

Published 3 March 2006

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Dipak Barua, Theodosia Gougousi, Erin D. Young, and Gregory N. Parsons
North Carolina State University, Raleigh, North Carolina 27695
Thin films of aluminum oxide and palladium were deposited on silicon at low temperatures (70–120  °C) by a cyclic adsorption/reaction processes using supercritical CO2 solvent. Precursors included Al(hfac)3, Al(acac)3, and Pd(hfac)2, and aqueous H2O2, tert-butyl peracetate, and H2 were used as the oxidants or reductants. For the precursors studied, growth proceeds through a multilayer precursor adsorption in each deposition cycle, and film thickness increased linearly with the number of growth cycles. ©2006 American Institute of Physics
History: Received 31 August 2005; accepted 23 January 2006; published 3 March 2006
Permalink: http://link.aip.org/link/?APPLAB/88/092904/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.55.Ac
    Thin film nucleation and growth: microscopic aspects
  • 68.43.Mn
    Adsorption/desorption kinetics
  • 81.15.Lm
    Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
  • YEAR: 2006

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ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (12)
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