In situ monitoring of GaN epitaxial lateral overgrowth by spectroscopic reflectometry
The application of spectroscopic reflectometry to the monitoring of epitaxial lateral overgrowth of GaN in low pressure metalorganic vapor phase epitaxy has been investigated. Real-time vertical and l...
The application of spectroscopic reflectometry to the monitoring of epitaxial lateral overgrowth of GaN in low pressure metalorganic vapor phase epitaxy has been investigated. Real-time vertical and l...
Lasing in an intermediate twisted phase between cholesteric and smectic A phase
This work describes the observation of lasing in an intermediate chiral phase of a dye-doped cholesteric liquid crystal mixture. This intermediate phase exists between cholesteric and smectic A phase ...
This work describes the observation of lasing in an intermediate chiral phase of a dye-doped cholesteric liquid crystal mixture. This intermediate phase exists between cholesteric and smectic A phase ...
Highly efficient white-light-emitting diodes fabricated with short-wavelength yellow oxynitride phosphors
Appl. Phys. Lett. 88, 101104 (2006); doi:10.1063/1.2182067
Published 6 March 2006
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We have already reported orangish yellow Ca–
-SiAlON:Eu2+ phosphors, and applied them to fabricate warm white light-emitting diodes (LEDs). In this letter, we report on greenish yellow Li–-SiAlON:Eu2+ phosphors, and use them to create daylight when coupled to an InGaN blue LED chip (460 nm). The newly discovered Li–-SiAlON:Eu2+ phosphors emit at shorter wavelengths of 573–577 nm under the 460 nm excitation, and exhibit a smaller Stokes shift than Ca–-SiAlON:Eu2+ does. By using this short-wavelength yellow oxynitride phosphor, bright daylight emissions from white LEDs can be generated. Thus, highly efficient white LEDs with tunable white light can be fabricated with -SiAlON:Eu2+ phosphors, enabling them for a wider range of applications.
©2006 American Institute of Physics
-SiAlON:Eu2+ phosphors, and applied them to fabricate warm white light-emitting diodes (LEDs). In this letter, we report on greenish yellow Li–-SiAlON:Eu2+ phosphors, and use them to create daylight when coupled to an InGaN blue LED chip (460 nm). The newly discovered Li–-SiAlON:Eu2+ phosphors emit at shorter wavelengths of 573–577 nm under the 460 nm excitation, and exhibit a smaller Stokes shift than Ca–-SiAlON:Eu2+ does. By using this short-wavelength yellow oxynitride phosphor, bright daylight emissions from white LEDs can be generated. Thus, highly efficient white LEDs with tunable white light can be fabricated with -SiAlON:Eu2+ phosphors, enabling them for a wider range of applications.
©2006 American Institute of Physics
| History: | Received 31 August 2005; accepted 25 January 2006; published 6 March 2006 |
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http://link.aip.org/link/?APPLAB/88/101104/1 |
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REFERENCES (16)
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