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High-detectivity quantum-dot infrared photodetectors grown by metalorganic chemical-vapor deposition

Appl. Phys. Lett. 88, 121102 (2006); doi:10.1063/1.2188056

Published 20 March 2006

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J. Szafraniec, S. Tsao, W. Zhang, H. Lim, M. Taguchi, A. A. Quivy, B. Movaghar, and M. Razeghi
Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208
A mid-wavelength infrared photodetector based on InGaAs quantum dots buried in an InGaP matrix and deposited on a GaAs substrate was demonstrated. Its photoresponse at T=77  K was measured to be around 4.7  µm with a cutoff at 5.5  µm. Due to the high peak responsivity of 1.2  A/W and low dark-current noise of the device, a specific peak detectivity of 1.1×1012  cm  Hz1/2  W–1 was achieved at –0.9  V bias. ©2006 American Institute of Physics
History: Received 30 August 2005; accepted 20 February 2006; published 20 March 2006
Permalink: http://link.aip.org/link/?APPLAB/88/121102/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.60.Gz
    Photodetectors including infrared and CCD detectors
  • 07.57.Kp
    Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
  • 81.15.Gh
    Chemical vapor deposition including plasma-enhanced CVD, MOCVD, etc
  • 85.30.-z
    Semiconductor devices
  • YEAR: 2006

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
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REFERENCES (11)
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