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Determination of domain wall resistance in a cobalt thin film by thickness modulation

Appl. Phys. Lett. 88, 122503 (2006); doi:10.1063/1.2186978

Published 20 March 2006

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Wei-Li Lee, Frank Q. Zhu, and C. L. Chien
Department of Physics and Astronomy, Johns Hopkins University, Baltimore, Maryland 21218
Inspired by a well-known fact that the magnetic coercivity of a thin film has a strong dependence on its thickness, we have fabricated a 5×60  µm and 30  nm thick cobalt (Co) strip with thickness modulation along its long axis. The modulation period of 700  nm with a depth of 8  nm was prepared by a focused ion beam. From magnetic force microscope images, we observed an induced magnetic anisotropy along the short axis of the strip. By comparing out-of-plane magnetoresistance measurements in two magnetic remnant states, we extracted a positive domain wall resistance of 0.03  Omega, corresponding to 0.14% magnetoresistance (MR) in a Co thin film. ©2006 American Institute of Physics
History: Received 7 January 2006; accepted 1 February 2006; published 20 March 2006
Permalink: http://link.aip.org/link/?APPLAB/88/122503/1
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KEYWORDS and PACS

Keywords
PACS
  • 75.70.Ak
    Magnetic properties of monolayers and thin films
  • 75.47.Np
    Magnetotransport in metals and alloys
  • 75.60.Ej
    Magnetization curves, hysteresis, Barkhausen and related effects
  • 75.30.Gw
    Magnetic anisotropy
  • 75.70.Kw
    Domain structure in magnetic films (magnetic bubbles)
  • 75.50.Cc
    Ferromagnetism of nonferrous metals and alloys
  • YEAR: 2006

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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